component
DMC3025LSD-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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page.json+122−8@@ -1,13 +1,132 @@ {+ "schema_version": 1,+ "type": "component", "slug": "dmc3025lsd-vb",+ "title": "DMC3025LSD-VB",+ "brief": "VBsemi Elec MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.", "version": "0.1.0",- "type": "component",- "description": "VBsemi Elec MOSFETs, SO-8. Datasheet-verified pinout, KiCad symbol/footprint/3D.",+ "license": "CC-BY-SA-4.0", "tags": [ "component", "transistors-thyristors", "dmc3025lsd-vb" ],+ "component": {+ "mpn": "DMC3025LSD-VB",+ "manufacturer": "VBsemi Elec",+ "package": "SO-8",+ "pin_count": 8,+ "category": "Transistors/Thyristors",+ "subcategory": "MOSFETs",+ "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603048191810023424",+ "parts": {+ "symbol": "dmc3025lsd-vb.kicad_sym",+ "footprint": "dmc3025lsd-vb.kicad_mod",+ "model_3d": "dmc3025lsd-vb.glb",+ "model_3d_step": "dmc3025lsd-vb.step",+ "lbr": "dmc3025lsd-vb.lbr"+ },+ "distributor_links": {},+ "pins": [+ {+ "number": "1",+ "name": "S1",+ "type": "passive",+ "description": "Source of N-channel MOSFET (Q1). Continuous drain current up to 8 A at TC = 25 \u00b0C; body-diode forward voltage ~0.81 V at IS = 5.4 A."+ },+ {+ "number": "2",+ "name": "G1",+ "type": "input",+ "description": "Gate of N-channel MOSFET (Q1). VGS(th) typ. 1.0-2.0 V; VGS absolute maximum \u00b120 V. Drive with 4.5 V / 8 V / 10 V per RDS(on) spec."+ },+ {+ "number": "3",+ "name": "S2",+ "type": "passive",+ "description": "Source of P-channel MOSFET (Q2). Continuous drain current up to -8 A at TC = 25 \u00b0C; body-diode forward voltage ~-0.77 V at IS = -2 A."+ },+ {+ "number": "4",+ "name": "G2",+ "type": "input",+ "description": "Gate of P-channel MOSFET (Q2). VGS(th) typ. -1.0 to -2.0 V; VGS absolute maximum \u00b120 V. Drive with -4.5 V / -8 V / -10 V per RDS(on) spec."+ },+ {+ "number": "5",+ "name": "D2",+ "type": "passive",+ "description": "Drain of P-channel MOSFET (Q2). VDS absolute maximum -30 V. Ganged with pin 6 internally to lower on-resistance and improve thermal performance."+ },+ {+ "number": "6",+ "name": "D2",+ "type": "passive",+ "description": "Drain of P-channel MOSFET (Q2). VDS absolute maximum -30 V. Ganged with pin 5 internally to lower on-resistance and improve thermal performance."+ },+ {+ "number": "7",+ "name": "D1",+ "type": "passive",+ "description": "Drain of N-channel MOSFET (Q1). VDS absolute maximum 30 V. Ganged with pin 8 internally to lower on-resistance and improve thermal performance."+ },+ {+ "number": "8",+ "name": "D1",+ "type": "passive",+ "description": "Drain of N-channel MOSFET (Q1). VDS absolute maximum 30 V. Ganged with pin 7 internally to lower on-resistance and improve thermal performance."+ }+ ],+ "provenance": {+ "extractor": "ds2sf",+ "datasheet": {+ "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603048191810023424",+ "pages": null,+ "sha256": "4873783440de19fc",+ "source_tier": "lcsc"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 8,+ "described": 8,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "metadata": {+ "specs": {+ "Manufacturer": "VBsemi Elec",+ "Package": "SO-8",+ "Category": "Transistors/Thyristors",+ "Pins": "8"+ }+ },+ "variants": [+ {+ "mpn": "DMC3025LSD-VB",+ "kind": "packaging"+ }+ ],+ "sections": [+ "hero",+ "viewers",+ "readme",+ "breadcrumbs",+ "info"+ ],+ "discovery_triggers": [+ "dmc3025lsd-vb"+ ],+ "discovery_pitch": "DMC3025LSD-VB (VBsemi Elec) component page with datasheet-verified CAD.",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }, "dependencies": {}, "hero": { "type": "image",@@ -25,10 +144,5 @@ "docs/dmc3025lsd-vb-datasheet.pdf", "viewers/symbol.html", "viewers/footprint.html"- ],- "visibility": "public",- "author": {- "name": "Ray",- "email": "[email protected]"- }+ ] }