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Contents

README

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DMC2700UDM-7

Diodes Incorporated · MOSFETs · SOT-26

DMC2700UDM-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of N-channel Q1 (20V, VGSS ±6V max), ESD protected to 2.5kV HBM.
2 S2 passive Source of P-channel Q2 (VDSS -20V).
3 G2 input Gate of P-channel Q2 (VGSS ±6V max), ESD protected to 2.5kV HBM.
4 D2 passive Drain of P-channel Q2 (VDSS -20V, ID -1.14A at TA=+25°C).
5 S1 passive Source of N-channel Q1 (VDSS 20V).
6 D1 passive Drain of N-channel Q1 (VDSS 20V, ID 1.34A at TA=+25°C).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain Source Voltage (N-ch Q1) VDSS 20 V 2
Gate-Source Voltage (N-ch Q1) VGSS -6 6 V 2
Drain Current (N-ch Q1) ID 1.34 A TA = +25°C 2
Drain Current (N-ch Q1) ID 0.97 A TA = +85°C 2
Pulsed Drain Current (N-ch Q1) IDM 5 A 10µs Pulse, Duty Cycle = 1% 2
Pulsed Body Diode Forward Current (N-ch Q1) ISM 5 A 10µs Pulse, Duty Cycle = 1% 2
Drain Source Voltage (P-ch Q2) VDSS -20 V 2
Gate-Source Voltage (P-ch Q2) VGSS -6 6 V 2
Drain Current (P-ch Q2) ID -1.14 A TA = +25°C 2
Drain Current (P-ch Q2) ID -1.07 A TA = +85°C 2
Pulsed Drain Current (P-ch Q2) IDM -2.5 A 10µs Pulse, Duty Cycle = 1% 2
Pulsed Body Diode Forward Current (P-ch Q2) ISM -2.5 A 10µs Pulse, Duty Cycle = 1% 2
Power Dissipation PD 1.12 W Note 5 2
Thermal Resistance, Junction to Ambient RJA 111 C/W Note 5 2
Operating and Storage Temperature Range TJ, TSTG -55 150 C 2
Drain-Source Breakdown Voltage (N-ch Q1) BVDSS 20 V VGS = 0V, ID = 250µA 3
Zero Gate Voltage Drain Current (N-ch Q1) IDSS 100 nA VDS = 20V, VGS = 0V 3
Gate-Source Leakage (N-ch Q1) IGSS -1 1 µA VGS = ±4.5V, VDS = 0V 3
Gate Threshold Voltage (N-ch Q1) VGS(TH) 0.5 1 V VDS = VGS, ID = 250µA 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(ON) 0.3 0.4 Ω VGS = 4.5V, ID = 600mA 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(ON) 0.4 0.5 Ω VGS = 2.5V, ID = 500mA 3
Static Drain-Source On-Resistance (N-ch Q1) RDS(ON) 0.5 0.7 Ω VGS = 1.8V, ID = 350mA 3
Diode Forward Voltage (N-ch Q1) VSD 0.7 1.2 V VGS = 0V, IS = 150mA 3
Drain-Source Breakdown Voltage (P-ch Q2) BVDSS -20 V VGS = 0V, ID = -250µA 3
Zero Gate Voltage Drain Current (P-ch Q2) IDSS -100 nA VDS = -20V, VGS = 0V 3
Gate-Source Leakage (P-ch Q2) IGSS -1 1 µA VGS = ±4.5V, VDS = 0V 3
Gate Threshold Voltage (P-ch Q2) VGS(TH) -0.5 -1 V VDS = VGS, ID = -250µA 3
Static Drain-Source On-Resistance (P-ch Q2) RDS(ON) 0.5 0.7 Ω VGS = -4.5V, ID = -430mA 3
Static Drain-Source On-Resistance (P-ch Q2) RDS(ON) 0.7 0.9 Ω VGS = -2.5V, ID = -300mA 3
Static Drain-Source On-Resistance (P-ch Q2) RDS(ON) 1 1.3 Ω VGS = -1.8V, ID = -150mA 3
Diode Forward Voltage (P-ch Q2) VSD -0.8 -1.2 V VGS = 0V, IS = -150mA 3

CAD (KiCad official)

  • Symbol: DMC2700UDM-7
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmc2700udm-7-etched.step / dmc2700udm-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmc2700udm-7.step / dmc2700udm-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (9 pp, sha256 a66fe0ba2ba0777c, retrieved 2026-10-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF