component
DMC2057UVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownDMC2057UVT-7
Diodes Incorporated · MOSFETs · TSOT-26
DMC2057UVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D1 | passive | Drain of the N-channel MOSFET Q1, with a drain-source voltage rating of 20V (VDSS). |
| 2 | S1 | passive | Source of the N-channel MOSFET Q1. |
| 3 | D2 | passive | Drain of the P-channel MOSFET Q2, with a drain-source voltage rating of -20V (VDSS). |
| 4 | G2 | input | Gate of the P-channel MOSFET Q2, with a gate-source voltage rating of ±8V (VGSS). |
| 5 | S2 | passive | Source of the P-channel MOSFET Q2. |
| 6 | G1 | input | Gate of the N-channel MOSFET Q1, with a gate-source voltage rating of ±12V (VGSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 Drain-Source Voltage | VDSS | 20 | V | TA = +25°C | 2 | ||
| Q2 Drain-Source Voltage | VDSS | -20 | V | TA = +25°C | 2 | ||
| Q1 Gate-Source Voltage | VGSS | -12 | 12 | V | TA = +25°C | 2 | |
| Q2 Gate-Source Voltage | VGSS | -8 | 8 | V | TA = +25°C | 2 | |
| Q1 Continuous Drain Current | ID | 4 | A | VGS = 4.5V, steady state, TA = +25°C (Note 6) | 2 | ||
| Q1 Continuous Drain Current | ID | 3.5 | A | VGS = 4.5V, steady state, TA = +70°C (Note 6) | 2 | ||
| Q2 Continuous Drain Current | ID | -3.3 | A | VGS = -4.5V, steady state, TA = +25°C (Note 6) | 2 | ||
| Q2 Continuous Drain Current | ID | -2.6 | A | VGS = -4.5V, steady state, TA = +70°C (Note 6) | 2 | ||
| Q1 Continuous Body Diode Forward Current | IS | 1.2 | A | Note 6 | 2 | ||
| Q2 Continuous Body Diode Forward Current | IS | -1.3 | A | Note 6 | 2 | ||
| Q1 Pulsed Drain Current | IDM | 25 | A | 10s Pulse, Duty Cycle = 1% | 2 | ||
| Q2 Pulsed Drain Current | IDM | -17 | A | 10s Pulse, Duty Cycle = 1% | 2 | ||
| Total Power Dissipation | PD | 0.7 | W | TA = +25°C (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 173 | °C/W | Steady State (Note 5) | 2 | ||
| Total Power Dissipation | PD | 1.1 | W | TA = +25°C (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 108 | °C/W | Steady State (Note 6) | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 37 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Q1 Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250µA | 2 | ||
| Q1 Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20V, VGS = 0V | 2 | ||
| Q1 Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0V | 2 | |
| Q1 Gate Threshold Voltage | VGS(TH) | 0.4 | 1.2 | V | VDS = VGS, ID = 250μA | 2 | |
| Q1 Static Drain-Source On-Resistance | RDS(ON) | 32 | 42 | mΩ | VGS = 4.5V, ID = 5.0A | 2 | |
| Q1 Static Drain-Source On-Resistance | RDS(ON) | 40 | 60 | mΩ | VGS = 2.5V, ID = 4.0A | 2 | |
| Q1 Static Drain-Source On-Resistance | RDS(ON) | 50 | 91 | mΩ | VGS = 1.8V, ID = 2.0A | 2 | |
| Q1 Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 1A | 2 | |
| Q2 Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250µA | 3 | ||
| Q2 Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -20V, VGS = 0V | 3 | ||
| Q2 Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±8V, VDS = 0V | 3 | |
| Q2 Gate Threshold Voltage | VGS(TH) | -0.4 | -1 | V | VDS = VGS, ID = -250μA | 3 | |
| Q2 Static Drain-Source On-Resistance | RDS(ON) | 60 | 70 | mΩ | VGS = -4.5V, ID = -3.5A | 3 | |
| Q2 Static Drain-Source On-Resistance | RDS(ON) | 73.5 | 100 | mΩ | VGS = -2.5V, ID = -3.0A | 3 | |
| Q2 Static Drain-Source On-Resistance | RDS(ON) | 113 | 160 | mΩ | VGS = -1.8V, ID = -2.0A | 3 | |
| Q2 Diode Forward Voltage | VSD | -0.7 | -1.2 | V | VGS = 0V, IS = -1A | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMC2057UVT-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmc2057uvt-7-etched.step/dmc2057uvt-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc2057uvt-7.step/dmc2057uvt-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
810b3a3356a672c2, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).