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DMC2020USD-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMC2020USD-13

Diodes Incorporated · MOSFETs · SO-8

DMC2020USD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of Q1 N-channel MOSFET (20V V(BR)DSS, 8.5A max ID at TA=+25°C).
2 G1 input Gate of Q1 N-channel MOSFET, ESD protected to 2kV with VGSS limit of 10V.
3 S2 passive Source of Q2 P-channel MOSFET (-20V V(BR)DSS, -6.8A max ID at TA=+25°C).
4 G2 input Gate of Q2 P-channel MOSFET, ESD protected to 2kV with VGSS limit of 10V.
5 D2 passive Drain of Q2 P-channel MOSFET, shorted to pin 6 externally on the PCB.
6 D2 passive Drain of Q2 P-channel MOSFET, shorted to pin 5 externally on the PCB.
7 D1 passive Drain of Q1 N-channel MOSFET, shorted to pin 8 externally on the PCB.
8 D1 passive Drain of Q1 N-channel MOSFET, shorted to pin 7 externally on the PCB.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage Q1 VDSS 20 V N-Channel Q1, TA = +25°C 2
Drain-Source Voltage Q2 VDSS -20 V P-Channel Q2, TA = +25°C 2
Gate-Source Voltage Q1 VGSS 10 V N-Channel Q1 2
Gate-Source Voltage Q2 VGSS 10 V P-Channel Q2 2
Continuous Drain Current Q1 ID 8.5 A VGS = 4.5V (Notes 6 & 8) 2
Continuous Drain Current Q2 ID -6.8 A VGS = 4.5V (Notes 6 & 8) 2
Continuous Drain Current Q1 ID 6.8 A TA = 70°C (Notes 6 & 8) 2
Continuous Drain Current Q2 ID -5.4 A TA = 70°C (Notes 6 & 8) 2
Pulsed Drain Current Q1 IDM 33.6 A VGS = 4.5V (Notes 7 & 8) 2
Pulsed Drain Current Q2 IDM -26.8 A VGS = 4.5V (Notes 7 & 8) 2
Continuous Source Current (Body diode) Q1 IS 4 A Notes 6 & 8 2
Continuous Source Current (Body diode) Q2 IS -4 A Notes 6 & 8 2
Pulsed Source Current (Body diode) Q1 ISM 33.6 A Notes 7 & 8 2
Pulsed Source Current (Body diode) Q2 ISM -26.8 A Notes 7 & 8 2
Power Dissipation PD 1.25 W Notes 5 & 8 2
Power Dissipation PD 1.8 W Notes 5 & 9 2
Power Dissipation PD 2.14 W Notes 6 & 8 2
Thermal Resistance, Junction to Ambient RθJA 100 °C/W Notes 5 & 8 2
Thermal Resistance, Junction to Ambient RθJA 70 °C/W Notes 5 & 9 2
Thermal Resistance, Junction to Ambient RθJA 58 °C/W Notes 6 & 8 2
Thermal Resistance, Junction to Lead RθJL 51 °C/W Notes 8 & 10 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Q1 Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 250μA 4
Q1 Zero Gate Voltage Drain Current IDSS 1 A VDS = 20V, VGS = 0V 4
Q1 Gate-Source Leakage IGSS -10 10 A VGS = ±10V, VDS = 0V 4
Q1 Gate Threshold Voltage VGS(th) 0.5 1.1 1.5 V VDS = VGS, ID = 250μA 4
Q1 Static Drain-Source On-Resistance RDS(ON) 13 20 mΩ VGS = 4.5V, ID = 7A 4
Q1 Static Drain-Source On-Resistance RDS(ON) 18 28 mΩ VGS = 2.5V, ID = 3A 4
Q1 Forward Transfer Admittance /Yfs/ 16 S VDS = 5V, ID = 9.4A 4
Q1 Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1.3A 4
Q1 Continuous Source Current IS 1.8 A 4
Q1 Input Capacitance Ciss 1149 pF VDS = 10V, VGS = 0V, f = 1.0MHz 4
Q1 Output Capacitance Coss 157 pF VDS = 10V, VGS = 0V, f = 1.0MHz 4
Q1 Reverse Transfer Capacitance Crss 142 pF VDS = 10V, VGS = 0V, f = 1.0MHz 4
Q1 Gate Resistance Rg 1.51 Ω VDS = 0V, VGS = 0V, f = 1MHz 4
Q2 Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250μA 7
Q2 Zero Gate Voltage Drain Current IDSS -1 A VDS = -20V, VGS = 0V 7
Q2 Gate-Source Leakage IGSS -10 10 A VGS = ±8V, VDS = 0V 7
Q2 Gate Threshold Voltage VGS(th) -0.4 -0.7 -1 V VDS = VGS, ID = -250μA 7
Q2 Static Drain-Source On-Resistance RDS(ON) 26 33 mΩ VGS = -4.5V, ID = -6A 7
Q2 Static Drain-Source On-Resistance RDS(ON) 33 45 mΩ VGS = -2.5V, ID = -3A 7
Q2 Forward Transfer Admittance /Yfs/ 14 S VDS = -5V, ID = -4A 7
Q2 Diode Forward Voltage VSD -0.7 -1 V VGS = 0V, IS = -1A 7
Q2 Continuous Source Current IS -1.8 A 7
Q2 Input Capacitance Ciss 1610 pF VDS = -10V, VGS = 0V, f = 1.0MHz 7
Q2 Output Capacitance Coss 157 pF VDS = -10V, VGS = 0V, f = 1.0MHz 7
Q2 Reverse Transfer Capacitance Crss 145 pF VDS = -10V, VGS = 0V, f = 1.0MHz 7
Q2 Gate Resistance Rg 9.45 Ω VDS = 0V, VGS = 0V, f = 1MHz 7

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminals Connections: See Diagram  Terminals: Finish - Matte Tin annealed over Copper lead frame. 1

CAD (KiCad official)

  • Symbol: DMC2020USD-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmc2020usd-13-etched.step / dmc2020usd-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmc2020usd-13.step / dmc2020usd-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (11 pp, sha256 084f0150b277517d, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF