component
DMC1028UVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMC1028UVT-7
Diodes Incorporated · MOSFETs · TSOT-26
DMC1028UVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of Q1 N-channel MOSFET (ESD-protected gate with gate protection diode); VGSS rating ±8V. |
| 2 | S2 | passive | Source of Q2 P-channel MOSFET; Q2 has VDSS of -20V and continuous drain current of -3.5A at VGS = -4.5V, TA = +25°C. |
| 3 | G2 | input | Gate of Q2 P-channel MOSFET (ESD-protected gate with gate protection diode); VGSS rating ±8V. |
| 4 | D2 | passive | Drain of Q2 P-channel MOSFET; VDSS of -20V and pulsed drain current IDM of -20A. |
| 5 | S1 | passive | Source of Q1 N-channel MOSFET; Q1 has VDSS of 12V and continuous drain current of 6.1A at VGS = 4.5V, TA = +25°C. |
| 6 | D1 | passive | Drain of Q1 N-channel MOSFET; VDSS of 12V and pulsed drain current IDM of 35A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Q1 N-Channel Drain-Source Breakdown Voltage | BVDSS | 12 | V | VGS = 0V, ID = 250μA | 2 | ||
| Q1 N-Channel Zero Gate Voltage Drain Current (TJ = +25°C) | IDSS | 1 | μA | VDS = 12V, VGS = 0V | 2 | ||
| Q1 N-Channel Gate-Source Leakage | IGSS | -10 | 10 | μA | VGS = ±8V, VDS = 0V | 2 | |
| Q1 N-Channel Gate Threshold Voltage | VGS(TH) | 0.4 | 1 | V | VDS = VGS, ID = 250μA | 2 | |
| Q1 N-Channel Static Drain-Source On-Resistance | RDS(ON) | 17 | 25 | mΩ | VGS = 4.5V, ID = 5.2A | 2 | |
| Q1 N-Channel Static Drain-Source On-Resistance | RDS(ON) | 21 | 32 | mΩ | VGS = 2.5V, ID = 4.8A | 2 | |
| Q1 N-Channel Static Drain-Source On-Resistance | RDS(ON) | 30 | 40 | mΩ | VGS = 1.8V, ID = 2.5A | 2 | |
| Q1 N-Channel Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 1A | 2 | |
| Q2 P-Channel Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250μA | 3 | ||
| Q2 P-Channel Zero Gate Voltage Drain Current (TJ = +25°C) | IDSS | -1 | μA | VDS = -20V, VGS = 0V | 3 | ||
| Q2 P-Channel Gate-Source Leakage | IGSS | -10 | 10 | μA | VGS = ±8V, VDS = 0V | 3 | |
| Q2 P-Channel Gate Threshold Voltage | VGS(TH) | -0.4 | -1 | V | VDS = VGS, ID = -250μA | 3 | |
| Q2 P-Channel Static Drain-Source On-Resistance | RDS(ON) | 55 | 80 | mΩ | VGS = -4.5V, ID = -3.8A | 3 | |
| Q2 P-Channel Static Drain-Source On-Resistance | RDS(ON) | 70 | 100 | mΩ | VGS = -2.5V, ID = -3.3A | 3 | |
| Q2 P-Channel Static Drain-Source On-Resistance | RDS(ON) | 88 | 140 | mΩ | VGS = -1.8V, ID = -1.0A | 3 | |
| Q2 P-Channel Static Drain-Source On-Resistance | RDS(ON) | 110 | 210 | mΩ | VGS = -1.5V, ID = -0.5A | 3 | |
| Q2 P-Channel Diode Forward Voltage | VSD | -0.7 | -1.2 | V | VGS = 0V, IS = -1A | 3 | |
| Q1 N-Channel Drain-Source Voltage | VDSS | 12 | V | 2 | |||
| Q2 P-Channel Drain-Source Voltage | VDSS | -20 | V | 2 | |||
| Q1 N-Channel Gate-Source Voltage | VGSS | -8 | 8 | V | Printed as ±8 | 2 | |
| Q2 P-Channel Gate-Source Voltage | VGSS | -8 | 8 | V | Printed as ±8 | 2 | |
| Q1 N-Channel Continuous Drain Current (steady state) | ID | 6.1 | A | VGS = 4.5V, TA = +25°C, steady state (Note 6) | 2 | ||
| Q2 P-Channel Continuous Drain Current (steady state) | ID | -3.5 | A | VGS = -4.5V, TA = +25°C, steady state (Note 6) | 2 | ||
| Q1 N-Channel Continuous Drain Current (steady state) | ID | 4.7 | A | VGS = 4.5V, TA = +70°C, steady state (Note 6) | 2 | ||
| Q2 P-Channel Continuous Drain Current (steady state) | ID | -2.7 | A | VGS = -4.5V, TA = +70°C, steady state (Note 6) | 2 | ||
| Q1 N-Channel Maximum Continuous Body Diode Forward Current | IS | 1.4 | A | Note 6 | 2 | ||
| Q2 P-Channel Maximum Continuous Body Diode Forward Current | IS | -1.4 | A | Note 6 | 2 | ||
| Q1 N-Channel Pulsed Drain Current | IDM | 35 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Q2 P-Channel Pulsed Drain Current | IDM | -20 | A | 10µs pulse, duty cycle = 1% | 2 | ||
| Total Power Dissipation (steady state, minimum pad layout) | PD | 0.8 | W | Note 5: FR-4, 2oz copper, minimum recommended pad layout | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state, minimum pad layout) | RθJA | 157 | °C/W | Steady state, Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient (t<5s, minimum pad layout) | RθJA | 102 | °C/W | t<5s, Note 5 | 2 | ||
| Total Power Dissipation (1 inch square copper plate) | PD | 1.2 | W | Note 6: FR-4, 2oz copper, 1 inch square copper plate | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state, 1 inch square copper plate) | RθJA | 108 | °C/W | Steady state, Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (t<5s, 1 inch square copper plate) | RθJA | 64 | °C/W | t<5s, Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 18 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Body Diode Reverse Recovery Charge QRR, 1.8, nC IS = 5.4A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. | 2 | |
| contacts | Copper | tin | Terminals Connections: See Diagram Terminals: Finish, Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMC1028UVT-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmc1028uvt-7-etched.step/dmc1028uvt-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmc1028uvt-7.step/dmc1028uvt-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (10 pp, sha256
a0ca1def77b51390, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).