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DMB2227A-7

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Diodes Incorporated Bipolar (BJT), SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmb2227a-7factory-2.0.0extractor-text

Verified DMB2227A-7

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier mfr, 6 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMB2227A-7 · SOT-26 · 6 pins
  • ✓copper: 6 copper pads, none touching another net
  • ✓datasheet: all 6 pin names found in the 6-page datasheet
  • ✓distributor: lcsc C5245588, digikey DMB2227A-7DITR-ND, mouser 621-DMB2227A-7
  • ✓family: SOT-23-6
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-e3579sig/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.1)
  • ✓pads: 6 pins = 6 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 6 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 20 kB, viewers/symbol.html 9 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmb2227a-7.kicad_sym✓ dmb2227a-7.kicad_mod✓ dmb2227a-7.step
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3D Model

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Symbol & Footprint

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PCB Footprint

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Datasheet

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Contents

README

markdown

DMB2227A-7

Diodes Incorporated · Bipolar (BJT) · SOT-26

DMB2227A-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 B1 passive Base of the 2222A-type NPN transistor (VEBO 6.0 V max, IC 600 mA continuous).
2 E2 passive Emitter of the 2907A-type PNP transistor (VEBO -5.0 V max, IC -600 mA continuous).
3 B2 passive Base of the 2907A-type PNP transistor (VEBO -5.0 V max, IC -600 mA continuous).
4 C2 passive Collector of the 2907A-type PNP transistor (VCEO -60 V, VCBO -60 V, IC -600 mA continuous).
5 E1 passive Emitter of the 2222A-type NPN transistor (VEBO 6.0 V max, IC 600 mA continuous).
6 C1 passive Collector of the 2222A-type NPN transistor (VCEO 40 V, VCBO 75 V, IC 600 mA continuous).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
NPN Collector-Base Voltage VCBO 75 V 2222A NPN, TA=25°C 1
NPN Collector-Emitter Voltage VCEO 40 V 2222A NPN, TA=25°C 1
NPN Emitter-Base Voltage VEBO 6 V 2222A NPN, TA=25°C 1
NPN Collector Current Continuous IC 600 mA 2222A NPN, TA=25°C 1
PNP Collector-Base Voltage VCBO -60 V 2907A PNP, TA=25°C 1
PNP Collector-Emitter Voltage VCEO -60 V 2907A PNP, TA=25°C 1
PNP Emitter-Base Voltage VEBO -5 V 2907A PNP, TA=25°C 1
PNP Collector Current Continuous IC -600 mA 2907A PNP, TA=25°C 1
Power Dissipation PD 300 mW Total, TA=25°C, Note 1 1
Thermal Resistance, Junction to Ambient RθJA 417 °C/W Note 1 1
Operating and Storage Temperature Range Tj, TSTG -55 150 °C 1
NPN Collector-Base Breakdown Voltage V(BR)CBO 75 V IC = 10μA, IE = 0 2
NPN Collector-Emitter Breakdown Voltage V(BR)CEO 40 V IC = 10mA, IB = 0 2
NPN Emitter-Base Breakdown Voltage V(BR)EBO 6 V IE = 10μA, IC = 0 2
NPN Collector Cutoff Current ICBO 10 nA VCB = 60V, IE = 0 2
NPN Emitter Cutoff Current IEBO 10 nA VEB = 3.0V, IC = 0 2
NPN Base Cutoff Current IBL 20 nA VCE = 60V, VEB(OFF) = 3.0V 2
NPN DC Current Gain hFE 35 IC = 100μA, VCE = 10V 2
NPN DC Current Gain hFE 50 IC = 1.0mA, VCE = 10V 2
NPN DC Current Gain hFE 75 IC = 10mA, VCE = 10V 2
NPN DC Current Gain hFE 100 300 IC = 150mA, VCE = 10V 2
NPN DC Current Gain hFE 40 IC = 500mA, VCE = 10V 2
NPN Collector-Emitter Saturation Voltage VCE(SAT) 0.3 V IC = 150mA, IB = 15mA 2
NPN Collector-Emitter Saturation Voltage VCE(SAT) 1 V IC = 500mA, IB = 50mA 2
NPN Base-Emitter Saturation Voltage VBE(SAT) 0.6 1.2 V IC = 150mA, IB = 15mA 2
NPN Base-Emitter Saturation Voltage VBE(SAT) 2 V IC = 500mA, IB = 50mA 2
NPN Output Capacitance Cobo 8 pF VCB = 10V, f = 1.0MHz, IE = 0 2
NPN Input Capacitance Cibo 25 pF VEB = 0.5V, f = 1.0MHz, IC = 0 2
NPN Current Gain-Bandwidth Product fT 300 MHz VCE = 20V, IC = 20mA, f = 100MHz 2
NPN Delay Time td 10 ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA 2
NPN Rise Time tr 25 ns VCC = 30V, IC = 150mA, VBE(off) = - 0.5V, IB1 = 15mA 2
NPN Storage Time ts 225 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 2
NPN Fall Time tf 60 ns VCC = 30V, IC = 150mA, IB1 = IB2 = 15mA 2
PNP Collector-Base Breakdown Voltage V(BR)CBO -60 V IC = -10μA, IE = 0 3
PNP Collector-Emitter Breakdown Voltage V(BR)CEO -60 V IC = -10mA, IB = 0 3
PNP Emitter-Base Breakdown Voltage V(BR)EBO -5 V IE = -10μA, IC = 0 3
PNP Collector Cutoff Current ICBO -10 nA VCB = -50V, IE = 0 3
PNP Collector Cutoff Current ICEX -50 nA VCE = -30V, VEB(OFF) = -0.5V 3
PNP Base Cutoff Current IBL -50 nA VCE = -30V, VEB(OFF) = -0.5V 3
PNP DC Current Gain hFE 75 IC = -100µA, VCE = -10V 3
PNP DC Current Gain hFE 100 IC = -1.0mA, VCE = -10V 3
PNP DC Current Gain hFE 100 300 IC = -150mA, VCE = -10V 3
PNP DC Current Gain hFE 50 IC = -500mA, VCE = -10V 3
PNP Collector-Emitter Saturation Voltage VCE(SAT) -0.4 V IC = -150mA, IB = -15mA 3
PNP Collector-Emitter Saturation Voltage VCE(SAT) -1.6 V IC = -500mA, IB = -50mA 3
PNP Base-Emitter Saturation Voltage VBE(SAT) -1.3 V IC = 150mA, IB = 15mA 3
PNP Base-Emitter Saturation Voltage VBE(SAT) -2.6 V IC = 500mA, IB = 50mA 3
PNP Output Capacitance Cobo 8 pF VCB = -10V, f = 1.0MHz, IE = 0 3
PNP Input Capacitance Cibo 30 pF VEB = -2.0V, f = 1.0MHz, IC = 0 3
PNP Current Gain-Bandwidth Product fT 200 MHz VCE = -20V, IC = -50mA, f = 100MHz 3
PNP Turn-On Time ton 45 ns VCC = -30V, IC = -150mA, IB1 = -15mA 3
PNP Delay Time td 10 ns VCC = -30V, IC = -150mA, IB1 = -15mA 3
PNP Rise Time tr 40 ns VCC = -30V, IC = -150mA, IB1 = -15mA 3
PNP Turn-Off Time toff 100 ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 3
PNP Storage Time ts 80 ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 3
PNP Fall Time tf 30 ns VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminals: Finish - Matte Tin annealed over Copper 1

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: DMB2227A-7
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26, generated on the KiCad land (body 1.6 x 3 mm, terminals on the pads, 1.1 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: dmb2227a-7-etched.step / dmb2227a-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmb2227a-7.step / dmb2227a-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 caaaf92611ec0bbf, retrieved 2026-11-13, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF