component
DK5030
Public Made by Adomby adom
Shenzhen DongKe Semicon AC-DC Controllers And Regulators, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDK5030
Shenzhen DongKe Semicon · AC-DC Controllers And Regulators · SOP-8
DK5030 from Shenzhen DongKe Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SEL | input | Output voltage select pin: left floating gives 3.3 V, tying to GND gives 2.7 V (low threshold 0.4 V), and a 100 kΩ resistor to GND gives 5.0 V, with an internal pull-up current of 13 µA and an absolute maximum of -0.3 to 7 V. |
| 2 | GND | power_in | Chip ground reference pin for the device. |
| 3 | VOUT | power_out | Regulated LDO output that supplies 2.7 V, 3.3 V or 5.0 V (selected via SEL) with about 140 mA current limit (110 to 160 mA) and an absolute maximum of -0.3 to 7 V; place the LDO output capacitor close to this pin. |
| 4 | VDD | power_in | Chip supply pin charged by the internal high-voltage start-up path, with start-up at 7.8 V typical, shutdown at 2.6 V, overvoltage protection at 7.8 V typical, and an absolute maximum of 9 V. |
| 5 | DRAIN | passive | Drain of the internal 650 V power MOSFET used for high-voltage start-up and supply; the breakdown voltage is 650 V minimum (absolute maximum 700 V), and a larger copper area improves heat dissipation. |
| 6 | DRAIN | passive | Drain of the internal 650 V power MOSFET used for high-voltage start-up and supply; the breakdown voltage is 650 V minimum (absolute maximum 700 V), and a larger copper area improves heat dissipation. |
| 7 | DRAIN | passive | Drain of the internal 650 V power MOSFET used for high-voltage start-up and supply; the breakdown voltage is 650 V minimum (absolute maximum 700 V), and a larger copper area improves heat dissipation. |
| 8 | DRAIN | passive | Drain of the internal 650 V power MOSFET used for high-voltage start-up and supply; the breakdown voltage is 650 V minimum (absolute maximum 700 V), and a larger copper area improves heat dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen DongKe Semicon |
| Package | SOP-8 |
| Category | Power Management (PMIC) |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage (power MOSFET) | VDRAIN | 700 | V | 3 | |||
| VDD supply voltage | VDD | 9 | V | 3 | |||
| VDD supply current | IDD | 10 | mA | 3 | |||
| Storage temperature range | TSTG | -55 | 155 | ℃ | 3 | ||
| Junction temperature | TJ | 150 | ℃ | 3 | |||
| Soldering temperature | TW | 280 | ℃ | 5S | 3 | ||
| ESD rating | 2000 | V | 3 | ||||
| DRAIN leakage current | IHV_leakage | 20 | uA | DRAIN=600V, VDD=8.5V | 3 | ||
| IDSS drain-source leakage current | IDSS | 1 | uA | VDS=650V, VGS=0V, TC=25℃ | 3 | ||
| Output overcurrent protection current | ILIM | 110 | 140 | 160 | mA | 3 | |
| Output undervoltage protection threshold | VUVP | 10 | 12.5 | 15 | % | 3 | |
| Power supply rejection ratio | PSRR | 50 | dB | Iout=30mA, Cout=4.7uF, f=10Hz to 60KHz | 3 | ||
| VSEL pull-up current | ISEL | 13 | uA | 3 | |||
| SEL low threshold for 2.7V output | VSEL_2.7V | 0.4 | V | output 2.7V | 3 | ||
| Startup (high voltage) current | IHV | 5 | 8 | mA | DRAIN=600V, VDD=2.8V | 3 | |
| AC synchronous shutdown voltage | VAC_off | 45 | V | 3 | |||
| DRAIN breakdown voltage | BVDRAIN | 650 | V | 3 | |||
| Circuit start voltage | VDD_ON | 7.6 | 7.8 | 8 | V | 3 | |
| Circuit shutdown voltage | VDD_OFF | 2.6 | V | 3 | |||
| VDD overvoltage protection voltage | VDD_OVP | 7.6 | 7.8 | 8 | V | 3 | |
| VDD overvoltage protection hysteresis voltage | VDD_OVP_hys | 6.3 | 6.5 | 6.7 | V | 3 | |
| Drain-source reverse voltage | VDS | 650 | V | VGS=0V, ID=250uA | 3 | ||
| On-state resistance | RDS(on) | 9.2 | 12 | Ω | VGS=10V, ID=0.5A | 3 | |
| Output voltage 3.3V | VOUT_3.3V | 3.2 | 3.3 | 3.4 | V | SEL floating, Iout=2mA | 3 |
| Output voltage 2.7V | VOUT_2.7V | 2.65 | 2.7 | 2.75 | V | SEL to GND, Iout=2mA | 3 |
| Output voltage 5V | VOUT_5V | 4.9 | 5 | 5.1 | V | SEL to GND via 100K, Iout=2mA | 3 |
| Thermal shutdown temperature | TSD | 155 | ℃ | 3 | |||
| Thermal shutdown hysteresis | TSD_HYS | 20 | ℃ | 3 |
CAD (KiCad official)
- Symbol:
DK5030 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
dk5030-etched.step/dk5030-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dk5030.step/dk5030.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen DongKe Semicon datasheet (9 pp, sha256
c97f61f0afabbf1f, retrieved 2026-10-18, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).