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DGD2190MS8-13
Public Made by Adomby adom
Diodes Incorporated Gate Drive ICs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DGD2190MS8-13
Diodes Incorporated · Gate Drive ICs · SO-8
DGD2190MS8-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | HIN | input | Logic input for the high-side gate driver output, in phase with HO; TTL/CMOS compatible (down to 3.3V) with Schmitt trigger and internal pull-down, 0 to 5V recommended. |
| 2 | LIN | input | Logic input for the low-side gate driver output, in phase with LO; TTL/CMOS compatible (down to 3.3V) with Schmitt trigger and internal pull-down, 0 to 5V recommended. |
| 3 | COM | power_in | Low-side and logic return (ground). |
| 4 | LO | output | Low-side gate drive output, capable of 4.5A typ. sink/source, swinging from 0 to VCC. |
| 5 | VCC | power_in | Low-side and logic fixed supply, recommended 10V to 20V (absolute maximum 24V) with undervoltage lockout. |
| 6 | VS | power_in | High-side floating supply return (offset), recommended up to 600V. |
| 7 | HO | output | High-side gate drive output, capable of 4.5A typ. sink/source, swinging between VS and VB. |
| 8 | VB | power_in | High-side floating supply, recommended VS+10V to VS+20V (absolute maximum 624V) with undervoltage lockout. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Power Supply Chip |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| High-Side Floating Supply Voltage | VB | -0.3 | 624 | V | TA = +25°C | 3 | |
| Offset Supply Voltage Transient | dVS/dt | 50 | V/ns | TA = +25°C | 3 | ||
| Low-Side and Logic Fixed Supply Voltage | VCC | -0.3 | 24 | V | TA = +25°C | 3 | |
| Low-Side Output Voltage (min only) | VLO | -0.3 | V | max is VCC +0.3 | 3 | ||
| Logic Input Voltage (HIN and LIN) (min only) | VIN | -0.3 | V | max is VCC +0.3 | 3 | ||
| Power Dissipation Linear Derating Factor | PD | 0.625 | W | JEDEC 2-layer FR-4 board, TA = +25°C | 3 | ||
| Operating Temperature | TJ | 150 | °C | TA = +25°C | 3 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 3 | ||
| Low-Side Fixed Supply Voltage | VCC | 10 | 20 | V | 3 | ||
| High-Side Floating Supply Offset Voltage | VS | 600 | V | Logic operation for VS of -5V to +600V | 3 | ||
| Low-Side Output Voltage (min only) | VLO | 0 | V | max is VCC | 3 | ||
| Logic Input Voltage (HIN and LIN) | VIN | 0 | 5 | V | 3 | ||
| Ambient Temperature | TA | -40 | 125 | °C | 3 | ||
| Logic 1 Input Voltage | VIH | 2.5 | V | VCC = 10V to 20V | 4 | ||
| Logic 0 Input Voltage | VIL | 0.8 | V | VCC = 10V to 20V | 4 | ||
| High Level Output Voltage, VBIAS - VO | VOH | 0.1 | V | IO = 0mA | 4 | ||
| Low Level Output Voltage, VO | VOL | 0.035 | V | IO = 0mA | 4 | ||
| Offset Supply Leakage Current | ILK | 50 | µA | VB = VS = 600V | 4 | ||
| Quiescent VBS Supply Current | IBSQ | 45 | 80 | µA | VIN = 0V or 5V | 4 | |
| Quiescent VCC Supply Current | ICCQ | 75 | 200 | µA | VIN = 0V or 5V | 4 | |
| Logic 1 Input Bias Current | IIN+ | 25 | 50 | µA | VIN = 5V | 4 | |
| Logic 0 Input Bias Current | IIN- | 1 | 2 | µA | VIN = 0V | 4 | |
| VBS Supply Undervoltage Positive Going Threshold | VBSUV+ | 7.6 | 8.4 | 9.8 | V | 4 | |
| VBS Supply Undervoltage Negative Going Threshold | VBSUV- | 6.9 | 7.8 | 9 | V | 4 | |
| VCC Supply Undervoltage Positive Going Threshold | VCCUV+ | 7.6 | 8.4 | 9.8 | V | 4 | |
| VCC Supply Undervoltage Negative Going Threshold | VCCUV- | 6.9 | 7.8 | 9 | V | 4 | |
| Output High Short Circuit Pulsed Current | IO+ | 3.5 | 4.5 | A | VO = 0V, PW ≤ 10ms | 4 | |
| Output Low Short Circuit Pulsed Current | IO- | 3.5 | 4.5 | A | VO = 15V, PW ≤ 10ms | 4 | |
| Turn-On Propagation Delay | tON | 140 | 200 | ns | VS = 0V, CL = 1000pF | 4 | |
| Turn-Off Propagation Delay | tOFF | 140 | 200 | ns | VS = 0V, CL = 1000pF | 4 | |
| Delay Matching, HO & LO Turn On/Off | tDM | 50 | ns | CL = 1000pF | 4 | ||
| Turn-On Rise Time | tR | 25 | 50 | ns | VS = 0V, CL = 1000pF | 4 | |
| Turn-Off Fall Time | tF | 20 | 45 | ns | VS = 0V, CL = 1000pF | 4 | |
| VCC and VBS Undervoltage Hysteresis (VCC) | VCCUVH | 0.6 | V | 4 | |||
| VCC and VBS Undervoltage Hysteresis (VBS) | VBSUVH | 0.6 | V | 4 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 200 | °C/W | JEDEC 2-layer FR-4 board | 3 | ||
| Thermal Resistance, Junction to Case | RθJC | 45 | °C/W | JEDEC 2-layer FR-4 board | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DGD2190MS8-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dgd2190ms8-13-etched.step/dgd2190ms8-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dgd2190ms8-13.step/dgd2190ms8-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (11 pp, sha256
d525729d511579fc, retrieved 2026-10-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).