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Contents

README

markdown

DC004NG-B

DOINGTER · MOSFETs · TO-252

DC004NG-B from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) 1.2 to 2.5 V at ID=250μA.
2 D passive Drain, also the exposed tab; VDS rated 30 V and continuous ID 100 A at TC=25℃.
3 S passive Source; current return for the 100 A continuous drain current at TC=25℃.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID 100 A TC=25℃ 1
Continuous Drain Current ID 57 A TC=100℃ 1
Pulsed Drain Current IDM 360 A 1
Single Pulse Avalanche Energy EAS 125 mJ 1
Power Dissipation PD 88 W TC=25℃ 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 1.7 ℃/W 1
Thermal Resistance, Junction to Ambient RθJA 62 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS=0V,ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=30V. TJ=25℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate Threshold Voltage VGS(th) 1.2 1.6 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 3.1 4 mΩ VGS=10V,ID=24A 2
Drain-Source On Resistance RDS(ON) 4.5 6 mΩ VGS=4.5V,ID=12A 2
Input Capacitance Ciss 2200 3300 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance Coss 280 410 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 177 260 pF VDS=25V, VGS=0V, f=1MHz 2
Turn-On Delay Time td(on) 12.6 24 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Rise Time tr 19.5 37 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Turn-Off Delay Time td(off) 42.8 81 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Fall Time tf 13.2 25 ns VDD=15V, VGS=10V, RG=3.3, ID=15A 2
Total Gate Charge Qg 24 36 nC VGS=4.5V, VDS=15V, ID=24A 2
Gate-Source Charge Qgs 4.2 8 nC VGS=4.5V, VDS=15V, ID=24A 2
Gate-Drain Miller Charge Qgd 13 20 nC VGS=4.5V, VDS=15V, ID=24A 2
Source-Drain Diode Forward Voltage VSD 0.7 1 V VGS=0V,IS=1A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: DC004NG-B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: dc004ng-b-etched.step / dc004ng-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dc004ng-b.step / dc004ng-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 2e8c5e1a4079ae4a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF