component
DC004NG-B
Public Made by Adomby adom
DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDC004NG-B
DOINGTER · MOSFETs · TO-252
DC004NG-B from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V and threshold VGS(th) 1.2 to 2.5 V at ID=250μA. |
| 2 | D | passive | Drain, also the exposed tab; VDS rated 30 V and continuous ID 100 A at TC=25℃. |
| 3 | S | passive | Source; current return for the 100 A continuous drain current at TC=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Continuous Drain Current | ID | 100 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 57 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | 1 | |||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | 1 | |||
| Power Dissipation | PD | 88 | W | TC=25℃ | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.7 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=30V. TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.6 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 3.1 | 4 | mΩ | VGS=10V,ID=24A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 4.5 | 6 | mΩ | VGS=4.5V,ID=12A | 2 | |
| Input Capacitance | Ciss | 2200 | 3300 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Output Capacitance | Coss | 280 | 410 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Reverse Transfer Capacitance | Crss | 177 | 260 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | |
| Turn-On Delay Time | td(on) | 12.6 | 24 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Rise Time | tr | 19.5 | 37 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Turn-Off Delay Time | td(off) | 42.8 | 81 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Fall Time | tf | 13.2 | 25 | ns | VDD=15V, VGS=10V, RG=3.3, ID=15A | 2 | |
| Total Gate Charge | Qg | 24 | 36 | nC | VGS=4.5V, VDS=15V, ID=24A | 2 | |
| Gate-Source Charge | Qgs | 4.2 | 8 | nC | VGS=4.5V, VDS=15V, ID=24A | 2 | |
| Gate-Drain Miller Charge | Qgd | 13 | 20 | nC | VGS=4.5V, VDS=15V, ID=24A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 0.7 | 1 | V | VGS=0V,IS=1A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
DC004NG-B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dc004ng-b-etched.step/dc004ng-b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dc004ng-b.step/dc004ng-b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
2e8c5e1a4079ae4a, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).