component

D95NH02L-VB TO252

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistord95nh02l-vb to252factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 11d ago
viewers d95nh02l-vb-to252: viewers · Ray 11d ago
d95nh02l-vb-to252-etched.glb Publish 0.1.0 · Ray 11d ago
d95nh02l-vb-to252-etched.step d95nh02l-vb-to252: factory component page (tier=lcsc) · Ray 11d ago
d95nh02l-vb-to252-hero.glb d95nh02l-vb-to252: hero GLB from the etched model (keeps the MPN mark) · Ray 11d ago
d95nh02l-vb-to252-hero.overlay.json Publish 0.1.0 · Ray 11d ago
d95nh02l-vb-to252.glb Publish 0.1.0 · Ray 11d ago
d95nh02l-vb-to252.kicad_mod Publish 0.1.0 · Ray 11d ago
d95nh02l-vb-to252.kicad_sym Publish 0.1.0 · Ray 11d ago
d95nh02l-vb-to252.lbr Publish 0.1.0 · Ray 11d ago
d95nh02l-vb-to252.step Publish 0.1.0 · Ray 11d ago
package.json Publish 0.1.0 · Ray 11d ago
page.json Set visibility: public · Ray 11d ago
README.md Publish 0.1.0 · Ray 11d ago

D95NH02L-VB TO252

VBsemi Elec · MOSFETs · TO-252

D95NH02L-VB TO252 from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±15 V maximum with threshold voltage of 0.5 V minimum at 250 µA.
2 D passive Drain terminal, connected to the tab; drain-source voltage is rated at 20 V with continuous drain current of 100 A at TC = 25°C (package limited).
3 S passive Source terminal of the N-channel MOSFET; continuous source current (diode conduction) is rated at 65 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS = 0 V, ID = 250 µA 2
Gate Threshold Voltage VGS(th) 0.5 1.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = 12 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (125C) IDSS 50 µA VDS = 20 V, VGS = 0 V, TJ = 125C 2
On-State Drain Current ID(on) 100 A VDS = 5 V, VGS = 4.5 V 2
Drain-Source On-State Resistance rDS(on) 0.0045 Ω VGS = 4.5 V, ID = 20 A 2
Drain-Source On-State Resistance (125C) rDS(on) 0.0055 Ω VGS = 4.5 V, ID = 20 A, TJ = 125C 2
Drain-Source On-State Resistance rDS(on) 0.006 Ω VGS = 2.5 V, ID = 20 A 2
Forward Transconductance gfs 20 S VDS = 5 V, ID = 40 A 2
Total Gate Charge Qg 26 35 nC VDS = 10 V, VGS = 4.5 V, ID = 40 A 2
Gate Resistance Rg 1 3.7 Ω 2
Turn-On Delay Time td(on) 20 35 ns VDD = 10 V, RL = 0.25 Ω, ID ≅ 40 A, VGEN = 4.5 V, RG = 2.5 Ω 2
Rise Time tr 120 190 ns VDD = 10 V, RL = 0.25 Ω, ID ≅ 40 A, VGEN = 4.5 V, RG = 2.5 Ω 2
Turn-Off Delay Time td(off) 45 70 ns VDD = 10 V, RL = 0.25 Ω, ID ≅ 40 A, VGEN = 4.5 V, RG = 2.5 Ω 2
Fall Time tf 20 35 ns VDD = 10 V, RL = 0.25 Ω, ID ≅ 40 A, VGEN = 4.5 V, RG = 2.5 Ω 2
Pulsed Source Current ISM 100 A TC = 25C 2
Diode Forward Voltage VSD 1.2 1.5 V IF = 100 A, VGS = 0 V 2
Source-Drain Reverse Recovery Time trr 35 70 ns IF = 40 A, di/dt = 100 A/µs 2
Drain-Source Voltage VDS 20 V TA = 25C 1
Gate-Source Voltage VGS -15 15 V TA = 25C 1
Continuous Drain Current ID 100 A TC = 25C, package limited 1
Continuous Drain Current ID 80 A TC = 100C, package limited 1
Pulsed Drain Current IDM 200 A 1
Continuous Source Current (Diode Conduction) IS 65 A package limited 1
Maximum Power Dissipation PD 71 W TC = 25C 1
Maximum Power Dissipation PD 8.3 W TA = 25C, t ≤ 10 sec 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 15 18 °C/W t ≤ 10 sec, surface mounted on 1" x 1" FR4 board 1
Junction-to-Ambient Thermal Resistance RthJA 40 50 °C/W Steady state, surface mounted on 1" x 1" FR4 board 1
Junction-to-Case Thermal Resistance RthJC 1.75 2.1 °C/W 1
Input Capacitance Ciss 3660 pF VGS = 0 V, VDS = 20 V, f = 1 MHz 2
Output Capacitance Coss 730 pF VGS = 0 V, VDS = 20 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 375 pF VGS = 0 V, VDS = 20 V, f = 1 MHz 2
Gate-Source Charge Qgs 5 nC VDS = 10 V, VGS = 4.5 V, ID = 40 A 2
Gate-Drain Charge Qgd 7 nC VDS = 10 V, VGS = 4.5 V, ID = 40 A 2

CAD (KiCad official)

  • Symbol: D95NH02L-VB TO252
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: d95nh02l-vb-to252-etched.step / d95nh02l-vb-to252-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); d95nh02l-vb-to252.step / d95nh02l-vb-to252.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (6 pp, sha256 fcf89a1b4d131035, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF