component
D882Y-2AF
Public Made by Adomby adom
FOSAN Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 13d ago |
| viewers | 13d ago |
| d882y-2af-etched.glb | 13d ago |
| d882y-2af-etched.step | 13d ago |
| d882y-2af-hero.glb | 13d ago |
| d882y-2af-hero.overlay.json | 13d ago |
| d882y-2af.glb | 13d ago |
| d882y-2af.kicad_mod | 13d ago |
| d882y-2af.kicad_sym | 13d ago |
| d882y-2af.lbr | 13d ago |
| d882y-2af.step | 13d ago |
| package.json | 13d ago |
| page.json | 13d ago |
| README.md | 13d ago |
D882Y-2AF
FOSAN · Bipolar (BJT) · SOT-89-3L
D882Y-2AF from FOSAN, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 6 V, with BVEBO min 6 V at IE=100µA and IEBO max 1 µA at VEB=6V. |
| 2 | C | passive | Collector of the NPN transistor, also connected to the exposed tab; VCBO 40 V, VCEO 30 V, IC max 3000 mA, VCE(sat) max 0.5 V at IC=2A. |
| 3 | E | passive | Emitter of the NPN transistor; power dissipation 500 mW at Ta=25℃, junction and storage temperature -55 to +150℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | FOSAN |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 40 | V | IC= 100µA, IE=0 | 2 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | V | IC= 10mA, IB=0 | 2 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE= 100µA, IC=0 | 2 | ||
| Collector-Base Leakage Current | ICBO | 1 | µA | VCB= 40V, IE=0 | 2 | ||
| Collector-Emitter Leakage Current | ICEO | 10 | µA | VCE= 30V, IB=0 | 2 | ||
| Emitter-Base Leakage Current | IEBO | 1 | µA | VEB= 6V, IC=0 | 2 | ||
| DC Current Gain | HFE | 60 | 400 | VCE= 2V, IC= 1000mA | 2 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.5 | V | IC= 2A, IB= 0.2A | 2 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1.5 | V | IC= 2A, IB= 0.2A | 2 | ||
| Collector-Base Voltage | VCBO | 40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 30 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current | IC | 3000 | mA | 1 | |||
| Power dissipation | PC | 500 | mW | Ta=25℃ | 1 | ||
| Junction and Storage Temperature | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RΘJA | 250 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
D882Y-2AF - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
d882y-2af-etched.step/d882y-2af-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);d882y-2af.step/d882y-2af.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: FOSAN datasheet (4 pp, sha256
76dc78ba9b0dfc33, retrieved 2026-10-21, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).