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D882SSG-P-AE3-R

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UTC Unisonic Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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D882SSG-P-AE3-R

UTC Unisonic Tech · Bipolar (BJT) · SOT-23

D882SSG-P-AE3-R from UTC Unisonic Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter of the D882SS NPN transistor; the absolute maximum emitter-base voltage VEBO is 5 V, and the device is rated for 3 A DC collector current (7 A pulse) with VCEO 30 V.
2 B passive Base of the D882SS NPN transistor; absolute maximum base current IB is 0.6 A.
3 C passive Collector of the D882SS NPN transistor; absolute maximum ratings are VCBO 40 V, VCEO 30 V, and IC 3 A DC (ICP 7 A pulse), with collector dissipation of 350 mW at TA=25°C.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 40 V 2
Collector-Emitter Voltage VCEO 30 V 2
Emitter-Base Voltage VEBO 5 V 2
Collector Current DC IC 3 A 2
Collector Current Pulse ICP 7 A 2
Base Current IB 0.6 A 2
Collector Dissipation PC 350 mW TA=25°C 2
Collector Dissipation PC 10 W TC=25°C 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO 40 V IC=100μA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO 30 V IC=1mA, IB=0 2
Emitter-Base Breakdown Voltage BVEBO 5 V IE=100μA, IC=0 2
Collector Cut-off Current ICBO 1000 nA VCB=30V, IE=0 2
Emitter Cut-off Current IEBO 1000 nA VEB=3V, IC=0 2
DC Current Gain hFE1 hFE1 30 200 VCE=2V, IC=20mA; pulse test PW<300μs, duty cycle<2% 2
DC Current Gain hFE2 (rank P) hFE2 160 320 VCE=2V, IC=1A; pulse test PW<300μs, duty cycle<2% 2
Collector-Emitter Saturation Voltage VCE(SAT) 0.3 0.5 V IC=2A, IB=0.2A 2
Base-Emitter Saturation Voltage VBE(SAT) 1 2 V IC=2A, IB=0.2A 2
Current Gain Bandwidth Product fT 80 MHz VCE=5V, IC=0.1A 2
Output Capacitance Cob 45 pF VCB=10V, IE=0, f=1MHz 2

CAD (KiCad official)

  • Symbol: D882SSG-P-AE3-R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: d882ssg-p-ae3-r-etched.step / d882ssg-p-ae3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); d882ssg-p-ae3-r.step / d882ssg-p-ae3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (4 pp, sha256 364ad1302e7b8bb1, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF