# D1616AGC929

**ALJ** · Bipolar (BJT) · TO-92

D1616AGC929 from ALJ, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Emitter | passive | Emitter terminal of the NPN transistor; the datasheet's maximum emitter-base voltage VEBO is 6 V. |
| 2 | C | passive | Collector terminal of the NPN transistor; the datasheet's maximum collector-base voltage VCBO is 120 V and collector current IC is 1 A. |
| 3 | Base | passive | Base terminal of the NPN transistor; in the saturation test (IC = 1 A) the base current is IB = 50 mA, giving VBE(sat) of 1.2 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ALJ |
| Package | TO-92 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 120 |  |  | V | IC = 10µA, IE = 0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 60 |  |  | V | IC = 2mA, IB = 0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE = 10µA, IC = 0 | 1 |
| Collector cut-off current | ICBO |  |  | 100 | nA | VCB = 60V, IE = 0 | 1 |
| Emitter cut-off current | IEBO |  |  | 100 | nA | VEB = 6V, IC = 0 | 1 |
| DC current gain | hFE(1) | 135 |  | 600 |  | VCE = 2V, IC = 100mA | 1 |
| DC current gain | hFE(3) | 81 |  |  |  | VCE = 2V, IC = 1A | 1 |
| Collector-emitter saturation voltage (pulse test) | VCE(sat) |  |  | 0.3 | V | IC = 1A, IB = 50mA | 1 |
| Base-emitter saturation voltage (pulse test) | VBE(sat) |  |  | 1.2 | V | IC = 1A, IB = 50mA | 1 |
| Base-emitter voltage (pulse test) | VBE | 0.6 |  | 0.7 | V | VCE = 2V, IC = 50mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE = 2V, IC = 100mA | 1 |
| Output capacitance | Cob |  |  | 19 | pF | VCB = 10V, IE = 0, f = 1MHz | 1 |
| Turn time | ton |  |  | 0.07 | μs | VCC = 10V, IC = 100mA, IB1 = -IB2 = 10mA | 1 |
| Storage time | ts |  |  | 0.95 | μs | VCC = 10V, IC = 100mA, IB1 = -IB2 = 10mA | 1 |
| Fall time | tf |  |  | 0.07 | μs | VCC = 10V, IC = 100mA, IB1 = -IB2 = 10mA | 1 |
| Collector Base Voltage | VCBO |  |  | 120 | V |  | 1 |
| Collector Emitter Voltage | VCEO |  |  | 60 | V |  | 1 |
| Emitter Base Voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector Current | IC |  |  | 1 | A |  | 1 |
| Collector Power Dissipation | PC |  |  | 750 | mW |  | 1 |
| Junction Temperature | Tj |  |  | 150 | °C |  | 1 |
| Storage Temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance from Junction to Ambient | RθJA |  | 167 |  | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `D1616AGC929`
- Footprint: `Package_TO_SOT_THT:TO-92_Inline`
- 3D model: TO-92 (KiCad packages3D, STEP)
- 3D model files: `d1616agc929-etched.step` / `d1616agc929-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `d1616agc929.step` / `d1616agc929.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ALJ datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603352156326420480) (2 pp, sha256 `cbb3bf44c59074f8`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/d1616agc929-datasheet.pdf)