component
CY62148ELL-45ZSXI
Public Made by Adomby adom
Cypress Semicon Pre-ordered Products, SOIC-32. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
CY62148ELL-45ZSXI
Cypress Semicon · Pre-ordered Products · SOIC-32
CY62148ELL-45ZSXI from Cypress Semicon, in a SOIC-32. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A17 | input | Address input A17 selecting the memory location, one of A0 through A18. |
| 2 | A16 | input | Address input A16 selecting the memory location, one of A0 through A18. |
| 3 | A14 | input | Address input A14 selecting the memory location, one of A0 through A18. |
| 4 | A12 | input | Address input A12 selecting the memory location, one of A0 through A18. |
| 5 | A7 | input | Address input A7 selecting the memory location, one of A0 through A18. |
| 6 | A6 | input | Address input A6 selecting the memory location, one of A0 through A18. |
| 7 | A5 | input | Address input A5 selecting the memory location, one of A0 through A18. |
| 8 | A4 | input | Address input A4 selecting the memory location, one of A0 through A18. |
| 9 | A3 | input | Address input A3 selecting the memory location, one of A0 through A18. |
| 10 | A2 | input | Address input A2 selecting the memory location, one of A0 through A18. |
| 11 | A1 | input | Address input A1 selecting the memory location, one of A0 through A18. |
| 12 | A0 | input | Address input A0 selecting the memory location, one of A0 through A18. |
| 13 | I/O0 | bidirectional | Data input/output 0; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 14 | I/O1 | bidirectional | Data input/output 1; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 15 | I/O2 | bidirectional | Data input/output 2; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 16 | VSS | power_in | Ground for the device. |
| 17 | I/O3 | bidirectional | Data input/output 3; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 18 | I/O4 | bidirectional | Data input/output 4; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 19 | I/O5 | bidirectional | Data input/output 5; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 20 | I/O6 | bidirectional | Data input/output 6; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 21 | I/O7 | bidirectional | Data input/output 7; high impedance when deselected (CE HIGH), outputs disabled (OE HIGH), or during a write. |
| 22 | CE | input | Chip Enable, active LOW; HIGH deselects the device and places it in standby power-down. |
| 23 | A10 | input | Address input A10 selecting the memory location, one of A0 through A18. |
| 24 | OE | input | Output Enable, active LOW; taken LOW with CE LOW and WE HIGH to read data onto the I/O pins. |
| 25 | A11 | input | Address input A11 selecting the memory location, one of A0 through A18. |
| 26 | A9 | input | Address input A9 selecting the memory location, one of A0 through A18. |
| 27 | A8 | input | Address input A8 selecting the memory location, one of A0 through A18. |
| 28 | A13 | input | Address input A13 selecting the memory location, one of A0 through A18. |
| 29 | WE | input | Write Enable, active LOW; taken LOW with CE LOW to write I/O data into the addressed location. |
| 30 | A18 | input | Address input A18 selecting the memory location, one of A0 through A18. |
| 31 | A15 | input | Address input A15 selecting the memory location, one of A0 through A18. |
| 32 | VCC | power_in | Supply voltage, 4.5 V to 5.5 V operating range. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cypress Semicon |
| Package | SOIC-32 |
| Category | Electronic Tools/Instruments/Consumables |
| Pins | 32 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Output HIGH voltage | VOH | 2.4 | V | VCC = 4.5 V, IOH = -1 mA | 5 | ||
| Output HIGH voltage | VOH | 3.4 | V | VCC = 5.5 V, IOH = -0.1 mA | 5 | ||
| Output LOW voltage | VOL | 0.4 | V | IOL = 2.1 mA | 5 | ||
| Input HIGH voltage | VIH | 2.2 | V | VCC = 4.5 V to 5.5 V; printed max is VCC + 0.5 | 5 | ||
| Input LOW voltage (TSOP II package) | VIL | -0.5 | 0.8 | V | VCC = 4.5 V to 5.5 V; TSOP II package | 5 | |
| Input leakage current | IIX | -1 | 1 | µA | GND < VI < VCC | 5 | |
| Output leakage current | IOZ | -1 | 1 | µA | GND < VO < VCC, output disabled | 5 | |
| VCC operating supply current | ICC | 15 | 20 | mA | f = fmax = 1/tRC, VCC = VCC(max), IOUT = 0 mA, CMOS levels | 5 | |
| VCC operating supply current | ICC | 3.5 | 6 | mA | f = 1 MHz, VCC = VCC(max), IOUT = 0 mA, CMOS levels | 5 | |
| Automatic CE power-down current, CMOS inputs | ISB2 | 2.5 | 7 | µA | CE > VCC, 0.2 V, VIN > VCC, 0.2 V or VIN < 0.2 V, f = 0, VCC = VCC(max) | 5 | |
| VCC for data retention | VDR | 2 | V | 7 | |||
| Data retention current | ICCDR | 3 | 8.8 | µA | VCC = VDR, CE > VCC, 0.2 V, VIN > VCC, 0.2 V or VIN < 0.2 V | 7 | |
| Chip deselect to data retention time | tCDR | 0 | ns | 7 | |||
| Operation recovery time | tR | 45 | ns | 45 ns speed bin (printed 45/55) | 7 | ||
| Read cycle time | tRC | 45 | ns | 8 | |||
| Address to data valid | tAA | 45 | ns | 8 | |||
| Data hold from address change | tOHA | 10 | ns | 8 | |||
| CE LOW to data valid | tACE | 45 | ns | 8 | |||
| OE LOW to data valid | tDOE | 22 | ns | 8 | |||
| OE LOW to low Z | tLZOE | 5 | ns | 8 | |||
| OE HIGH to high Z | tHZOE | 18 | ns | 8 | |||
| CE LOW to low Z | tLZCE | 10 | ns | 8 | |||
| CE HIGH to high Z | tHZCE | 18 | ns | 8 | |||
| CE LOW to power-up | tPU | 0 | ns | 8 | |||
| CE HIGH to power-down | tPD | 45 | ns | 8 | |||
| Write cycle time | tWC | 45 | ns | 8 | |||
| CE LOW to write end | tSCE | 35 | ns | 8 | |||
| Address setup to write end | tAW | 35 | ns | 8 | |||
| Address hold from write end | tHA | 0 | ns | 8 | |||
| Address setup to write start | tSA | 0 | ns | 8 | |||
| WE pulse width | tPWE | 35 | ns | 8 | |||
| Data setup to write end | tSD | 25 | ns | 8 | |||
| Data hold from write end | tHD | 0 | ns | 8 | |||
| WE LOW to high Z | tHZWE | 18 | ns | 8 | |||
| WE HIGH to low Z | tLZWE | 10 | ns | 8 | |||
| Storage temperature | TSTG | -65 | 150 | °C | 5 | ||
| Ambient temperature with power applied | TA | -55 | 125 | °C | 5 | ||
| Supply voltage to ground potential | -0.5 | 6 | V | printed as (VCCmax + 0.5 V) | 5 | ||
| DC voltage applied to outputs in high Z state | -0.5 | 6 | V | printed as (VCCmax + 0.5 V); notes 4, 5 | 5 | ||
| DC input voltage | -0.5 | 6 | V | printed as (VCCmax + 0.5 V); notes 4, 5 | 5 | ||
| Output current into outputs (LOW) | 20 | mA | 5 | ||||
| Static discharge voltage (MIL-STD-883, Method 3015) | 2001 | V | printed as > 2001 V | 5 | |||
| Latch-up current | 200 | mA | printed as > 200 mA | 5 | |||
| Supply voltage VCC | VCC | 4.5 | 5 | 5.5 | V | Industrial/Automotive-A, CY62148E | 5 |
| Ambient temperature (operating range) | TA | -40 | 85 | °C | Industrial/Automotive-A | 5 | |
| Input capacitance | CIN | 10 | pF | TA = 25 °C, f = 1 MHz, VCC = VCC(Typ) | 6 | ||
| Output capacitance | COUT | 10 | pF | 6 | |||
| Thermal resistance (junction to ambient), 32-pin TSOP II | θJA | 59.1 | °C/W | Still air, soldered on a 3 × 4.5 inch four-layer PCB | 6 | ||
| Thermal resistance (junction to case), 32-pin TSOP II | θJC | 12.19 | °C/W | 6 |
CAD (KiCad official)
- Symbol:
CY62148ELL-45ZSXI - Footprint:
Package_SO:SOIC-32_7.518x20.777mm_P1.27mm - 3D model: SOIC-32, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 2.65 mm nominal SOIC height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
cy62148ell-45zsxi-etched.step/cy62148ell-45zsxi-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cy62148ell-45zsxi.step/cy62148ell-45zsxi.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cypress Semicon datasheet (20 pp, sha256
609e28364a300e8e, retrieved 2026-10-31, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).