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CY14B101NA-ZS45XIT

Cypress Semicon · Non-Volatile Memory (ROM) · TSOP-44

CY14B101NA-ZS45XIT from Cypress Semicon, in a TSOP-44. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A0 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
2 A1 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
3 A2 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
4 A3 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
5 A4 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
6 CE input Chip Enable, active LOW; LOW selects the chip, HIGH deselects it.
7 DQ0 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
8 DQ1 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
9 DQ2 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
10 DQ3 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
11 VCC power_in Power supply input, 3.0 V +20%/-10% (2.7 V to 3.6 V).
12 VSS power_in Ground for the device; must be connected to system ground.
13 DQ4 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
14 DQ5 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
15 DQ6 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
16 DQ7 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
17 WE input Write Enable, active LOW; when chip is enabled and WE is LOW, data on the I/O pins is written to the addressed location.
18 A5 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
19 A6 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
20 A7 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
21 A8 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
22 A9 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
23 A10 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
24 A11 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
25 A12 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
26 A13 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
27 A14 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
28 VCAP passive AutoStore capacitor connection; supplies power to the nvSRAM during power loss to store data from SRAM to nonvolatile elements (61 µF min to 180 µF max to VSS).
29 DQ8 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
30 DQ9 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
31 DQ10 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
32 DQ11 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
33 VCC power_in Power supply input, 3.0 V +20%/-10% (2.7 V to 3.6 V).
34 VSS power_in Ground for the device; must be connected to system ground.
35 DQ12 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
36 DQ13 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
37 DQ14 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
38 DQ15 bidirectional Bidirectional data I/O line, used as input or output depending on operation.
39 BLE input Byte Low Enable, active LOW; controls DQ7-DQ0.
40 BHE input Byte High Enable, active LOW; controls DQ15-DQ8.
41 OE input Output Enable, active LOW; enables the data output buffers during read cycles, I/O pins are tristated when OE is HIGH.
42 A15 input Address input; A0-A15 select one of the 65,536 words in x16 configuration.
43 NC unconnected No connect; address expansion for 4-Mbit, pin not connected to the die.
44 NC unconnected No connect; address expansion for 2-Mbit, pin not connected to the die.

Key specifications

Parameter Value
Manufacturer Cypress Semicon
Package TSOP-44
Category Memory
Pins 44

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power supply voltage VCC 2.7 3 3.6 V Over the Operating Range 10
Ambient temperature (Industrial) -40 85 °C Operating Range, Industrial 10
Average VCC current ICC1 52 mA tRC = 45 ns, values obtained without output loads (IOUT = 0 mA) 10
Average VCC current during STORE ICC2 10 mA All inputs don't care, VCC = Max, average current for duration tSTORE 10
Average VCC current at tRC = 200 ns ICC3 35 mA VCC(Typ), 25 °C, all inputs cycling at CMOS levels, IOUT = 0 mA 10
Average VCAP current during AutoStore cycle ICC4 5 mA All inputs don't care. Average current for duration tSTORE 10
VCC standby current ISB 5 mA CE > (VCC, 0.2 V), VIN < 0.2 V or > (VCC, 0.2 V), inputs static, f = 0 MHz 10
Input leakage current (except HSB) IIX -1 1 µA VCC = Max, VSS < VIN < VCC 10
Input leakage current (for HSB) IIX -100 1 µA VCC = Max, VSS < VIN < VCC 10
Off-state output leakage current IOZ -1 1 µA VCC = Max, VSS < VOUT < VCC, CE or OE > VIH or BHE/BLE > VIH or WE < VIL 10
Input HIGH voltage VIH 2 V Max VCC + 0.5 V 10
Input LOW voltage VIL 0.8 V Min VSS, 0.5 V 10
Output HIGH voltage VOH 2.4 V IOUT = -2 mA 10
Output LOW voltage VOL 0.4 V IOUT = 4 mA 10
Storage capacitor VCAP 61 68 180 µF Between VCAP pin and VSS 11
Data retention DATAR 20 Years Over the Operating Range 11
Nonvolatile STORE operations NVC 1000 K Over the Operating Range 11
Input capacitance (except BHE, BLE and HSB) CIN 7 pF TA = 25 °C, f = 1 MHz, VCC = VCC(Typ) 11
Input capacitance (for BHE, BLE and HSB) CIN 8 pF TA = 25 °C, f = 1 MHz, VCC = VCC(Typ) 11
Output capacitance (except HSB) COUT 7 pF TA = 25 °C, f = 1 MHz, VCC = VCC(Typ) 11
Output capacitance (for HSB) COUT 8 pF TA = 25 °C, f = 1 MHz, VCC = VCC(Typ) 11
Thermal resistance junction to ambient ΘJA 41.74 °C/W 44-pin TSOP II, EIA/JESD51 11
Thermal resistance junction to case ΘJC 11.9 °C/W 44-pin TSOP II, EIA/JESD51 11
Storage temperature -65 150 °C 10
Maximum junction temperature 150 °C 10
Supply voltage on VCC relative to VSS VCC -0.5 4.1 V 10
Voltage applied to outputs in High Z state -0.5 V Max VCC + 0.5 V 10
Input voltage -0.5 V Max VCC + 0.5 V 10
Transient voltage (< 20 ns) on any pin to ground -2 V Max VCC + 2.0 V 10
Package power dissipation capability 1 W TA = 25 °C 10
DC output current 15 mA 1 output at a time, 1s duration 10
Surface mount Pb soldering temperature 260 °C 3 seconds 10
Static discharge voltage 2001 V per MIL-STD-883, Method 3015 (printed > 2001 V) 10
Latch up current 200 mA printed > 200 mA 10
Chip enable access time tACE 45 ns 45 ns 13
Read cycle time tRC 45 ns 45 ns 13
Address access time tAA 45 ns 45 ns 13
Output enable to data valid tDOE 20 ns 45 ns 13
Output hold after address change tOHA 3 ns 45 ns 13
Chip enable to output active tLZCE 3 ns 45 ns 13
Chip disable to output inactive tHZCE 15 ns 45 ns 13
Output enable to output active tLZOE 0 ns 45 ns 13
Output disable to output inactive tHZOE 15 ns 45 ns 13
Chip disable to power standby tPD 45 ns 45 ns 13
Byte enable to data valid tDBE 20 ns 45 ns 13
Write cycle time tWC 45 ns 45 ns 13
Write pulse width tPWE 30 ns 45 ns 13
Chip enable to end of write tSCE 30 ns 45 ns 13
Data setup to end of write tSD 15 ns 45 ns 13
Address setup to end of write tAW 30 ns 45 ns 13
Write enable to output disable tHZWE 15 ns 45 ns 13
Output active after end of write tLZWE 3 ns 45 ns 13
Byte enable to end of write tBW 30 ns 45 ns 13
Power-Up RECALL duration tHRECALL 20 ms 45 ns 16
STORE cycle duration tSTORE 8 ms 45 ns 16
Low voltage trigger level VSWITCH 2.65 V 45 ns column 16

CAD (KiCad official)

  • Symbol: CY14B101NA-ZS45XIT
  • Footprint: Package_SO:TSOP-II-44_10.16x18.41mm_P0.8mm
  • 3D model: TSOP-44 (KiCad packages3D, STEP)
  • 3D model files: cy14b101na-zs45xit-etched.step / cy14b101na-zs45xit-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cy14b101na-zs45xit.step / cy14b101na-zs45xit.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Cypress Semicon datasheet (31 pp, sha256 38d6da3b80b200ff, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF