component
CXT5551-1G6
Public Made by Adomby adom
SY(顺烨) Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| cxt5551-1g6-etched.glb | 14d ago |
| cxt5551-1g6-etched.step | 14d ago |
| cxt5551-1g6-hero.glb | 14d ago |
| cxt5551-1g6-hero.overlay.json | 14d ago |
| cxt5551-1g6.glb | 14d ago |
| cxt5551-1g6.kicad_mod | 14d ago |
| cxt5551-1g6.kicad_sym | 14d ago |
| cxt5551-1g6.lbr | 14d ago |
| cxt5551-1g6.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
CXT5551-1G6
SY(顺烨) · Bipolar (BJT) · SOT-89-3L
CXT5551-1G6 from SY(顺烨), in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | passive | Base terminal of the NPN silicon general-purpose transistor; the datasheet gives no pin-specific voltage or current limit for it. |
| 2 | C | passive | Collector terminal of the NPN transistor, rated at VCBO 180 V, VCEO 160 V and IC 0.6 A continuous per the maximum ratings. |
| 3 | E | passive | Emitter terminal of the NPN transistor, rated at VEBO 6 V per the maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | SY(顺烨) |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 180 | V | IC=100μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 160 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=10μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 50 | nA | VCB=120V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 50 | nA | VEB=4V,IC=0 | 1 | ||
| DC current gain | hFE(1) | 80 | VCE=5V,IC=1mA | 1 | |||
| DC current gain | hFE(2) | 100 | 300 | VCE=5V,IC=10mA | 1 | ||
| DC current gain | hFE(3) | 30 | VCE=5V,IC=50mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.15 | V | IC=10mA,IB=1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.2 | V | IC=50mA,IB=5mA | 1 | ||
| Base-emitter voltage | VBE(sat) | 1 | V | IC=10mA,IB=1mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=10V,IC=10mA,f=100MHz | 1 | ||
| Collector output capacitance | Cob | 6 | pF | VCB=10V,IE=0,f=1MHz | 1 | ||
| Noise figure | NF | 8 | dB | VCE=5V,Ic=0.2mA,f=10Hz to 15.7KHZ,Rs=10Ω | 1 | ||
| Collector-base voltage | VCBO | 180 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | 160 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | 6 | V | Ta=25℃ | 1 | ||
| Collector current, continuous | IC | 0.6 | A | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 0.5 | W | Ta=25℃ | 1 | ||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | Ta=25℃ | 1 |
CAD (KiCad official)
- Symbol:
CXT5551-1G6 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
cxt5551-1g6-etched.step/cxt5551-1g6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cxt5551-1g6.step/cxt5551-1g6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: SY(顺烨) datasheet (3 pp, sha256
87e4352f7334dd22, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).