component
CXT5551
Public Made by Adomby adom
hongjiacheng Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCXT5551
hongjiacheng · Bipolar (BJT) · SOT-89
CXT5551 from hongjiacheng, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base terminal of the NPN transistor; the emitter-base rating is VEBO 6.0 V maximum and the emitter-base cut-off current IEBO is at most 100 nA at VEB=6.0 V. |
| 2 | C | passive | Collector terminal of the NPN transistor; rated VCBO 180 V, VCEO 160 V, collector current IC 0.6 A, and collector power dissipation PC 500 mW. |
| 3 | E | passive | Emitter terminal of the NPN transistor; the emitter-base voltage rating is VEBO 6.0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | hongjiacheng |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 180 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | 160 | V | 1 | |||
| Emitter-Base Voltage | VEBO | 6 | V | 1 | |||
| Collector Current | IC | 0.6 | A | 1 | |||
| Collector Power Dissipation | PC | 500 | mW | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Junction temperature | Tj | -55 | 150 | ℃ | 1 | ||
| Typical Thermal Resistance junction-to-ambient | RθJ-A | 250 | ℃/W | 1 | |||
| Collector-Base Breakdown Voltage | V(BR)CBO | 180 | V | IC=100μA, IE=0 | 1 | ||
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 160 | V | IC=1.0mA, IB=0 | 1 | ||
| Emitter-Base Breakdown Voltage | V(BR)EBO | 6 | V | IE=10μA, IC=0 | 1 | ||
| Collector-Emitter cut-off current | ICEO | 100 | nA | VCB=180V, IE=0 | 1 | ||
| Collector-Base cut-off current | ICBO | 100 | nA | VCB=120V, IE=0 | 1 | ||
| Emitter-Base cut-off current | IEBO | 100 | nA | VEB=6.0V, IC=0 | 1 | ||
| DC Current Gain hFE(1) | hFE(1) | 80 | - | IC=1mA VCE=5.0V | 1 | ||
| DC Current Gain hFE(2) | hFE(2) | 100 | 300 | - | IC=10mA VCE=5.0V | 1 | |
| DC Current Gain hFE(3) | hFE(3) | 30 | - | IC=100mA VCE=5.0V | 1 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.15 | V | IC=10mA IB=1.0mA | 1 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | 1 | V | IC=10mA IB=1.0mA | 1 | ||
| Output Capacitance | Cob | 6 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 100 | 300 | MHz | IC=10mA, VCE=10V | 2 |
CAD (KiCad official)
- Symbol:
CXT5551 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
cxt5551-etched.step/cxt5551-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cxt5551.step/cxt5551.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: hongjiacheng datasheet (3 pp, sha256
906d1c365862c394, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).