component
CTS521
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TOSHIBA Schottky Barrier Diodes (SBD), SOD-882. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CTS521
TOSHIBA · Schottky Barrier Diodes (SBD) · SOD-882
CTS521 from TOSHIBA, in a SOD-882. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the Schottky barrier diode; reverse voltage VR max 30 V, average rectified current IO 200 mA. |
| 2 | Anode | passive | Anode of the Schottky barrier diode; forward voltage VF(3) 0.5 V max at IF = 200 mA, peak forward current IFM 300 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOD-882 |
| Category | Diodes |
| Pins | 2 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF(3) | 0.45 | 0.5 | V | IF = 200 mA | 2 | |
| Reverse current | IR(1) | 20 | µA | VR = 10 V | 2 | ||
| Reverse current | IR(2) | 30 | µA | VR = 30 V | 2 | ||
| Reverse voltage | VR | 30 | V | Ta = 25 | 1 | ||
| Peak forward current | IFM | 300 | mA | Ta = 25 | 1 | ||
| Average rectified current | IO | 200 | mA | Ta = 25 | 1 | ||
| Non-repetitive peak forward surge current | IFSM | 1 | A | Measured with a 10 ms pulse | 1 | ||
| Power dissipation | PD | 150 | mW | Mounted on glass-epoxy board 20 mm × 20 mm, pad 4 mm × 4 mm | 1 | ||
| Junction temperature | Tj | 125 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 125 | °C | 1 | ||
| Operating temperature | Topr | -40 | 100 | °C | 1 | ||
| Forward voltage | VF(1) | 0.2 | V | IF = 1 mA | 2 | ||
| Forward voltage | VF(2) | 0.24 | V | IF = 5 mA | 2 | ||
| Total capacitance | Ct | 25 | pF | VR = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
CTS521 - Footprint:
Diode_SMD:D_SOD-882 - 3D model: SOD-882 (KiCad packages3D, STEP)
- 3D model files:
cts521-etched.step/cts521-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cts521.step/cts521.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (5 pp, sha256
ef56cef4dec4e40c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CTS521
**TOSHIBA** · Schottky Barrier Diodes (SBD) · SOD-882
CTS521 from TOSHIBA, in a SOD-882. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the Schottky barrier diode; reverse voltage VR max 30 V, average rectified current IO 200 mA. |
| 2 | Anode | passive | Anode of the Schottky barrier diode; forward voltage VF(3) 0.5 V max at IF = 200 mA, peak forward current IFM 300 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOD-882 |
| Category | Diodes |
| Pins | 2 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Forward voltage | VF(3) | | 0.45 | 0.5 | V | IF = 200 mA | 2 |
| Reverse current | IR(1) | | | 20 | µA | VR = 10 V | 2 |
| Reverse current | IR(2) | | | 30 | µA | VR = 30 V | 2 |
| Reverse voltage | VR | | | 30 | V | Ta = 25 | 1 |
| Peak forward current | IFM | | | 300 | mA | Ta = 25 | 1 |
| Average rectified current | IO | | | 200 | mA | Ta = 25 | 1 |
| Non-repetitive peak forward surge current | IFSM | | | 1 | A | Measured with a 10 ms pulse | 1 |
| Power dissipation | PD | | | 150 | mW | Mounted on glass-epoxy board 20 mm × 20 mm, pad 4 mm × 4 mm | 1 |
| Junction temperature | Tj | | | 125 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 125 | °C | | 1 |
| Operating temperature | Topr | -40 | | 100 | °C | | 1 |
| Forward voltage | VF(1) | | 0.2 | | V | IF = 1 mA | 2 |
| Forward voltage | VF(2) | | 0.24 | | V | IF = 5 mA | 2 |
| Total capacitance | Ct | | 25 | | pF | VR = 0 V, f = 1 MHz | 2 |
## CAD (KiCad official)
- Symbol: `CTS521`
- Footprint: `Diode_SMD:D_SOD-882`
- 3D model: SOD-882 (KiCad packages3D, STEP)
- 3D model files: `cts521-etched.step` / `cts521-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cts521.step` / `cts521.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/cts521-datasheet.pdf) (5 pp, sha256 `ef56cef4dec4e40c`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cts521-datasheet.pdf)