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Contents

README

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CT785GR

CT Micro International · Transistor, Photovoltaic Output Optoisolators · DIP-4

CT785GR from CT Micro International, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode input Anode of the GaAs infrared-emitting diode; forward current IF is 60 mA max (1000 mA peak transient, ≤1µs, 300pps) with VF typically 1.2 V at IF=10 mA.
2 Cathode input Cathode of the infrared-emitting diode; reverse voltage VR is limited to 6 V max.
3 Emitter passive Phototransistor emitter; emitter-collector breakdown voltage BVECO is 7 V min.
4 Collector passive Phototransistor collector; collector current is 80 mA max and collector-emitter breakdown voltage BVCEO is 80 V min.

Key specifications

Parameter Value
Manufacturer CT Micro International
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Isolation voltage VISO 5300 VRMS 2
Total power dissipation PTOT 200 mW 2
Operating temperature TOPR -55 125 oC 2
Storage temperature TSTG -55 150 oC 2
Soldering temperature TSOL 260 oC 2
Forward current IF 60 mA 2
Peak transient current IF(TRANS) 1000 mA ≤1μs P.W,300pps 2
Reverse voltage VR 6 V 2
Emitter power dissipation PD 100 mW 2
Detector power dissipation PC 150 mW 2
Collector-Emitter Breakdown Voltage BVCEO 80 V 2
Emitter-Collector Breakdown Voltage BVECO 7 V 2
Collector Current IC 80 mA 2
Forward voltage VF 1.2 1.3 V IF= 10mA 3
Reverse Current IR 5 µA VR= 6V 3
Input Capacitance CIN 10 30 pF f= 1MHz 3
Collector-Emitter Breakdown BVCEO 80 V IC= 100µA 3
Emitter-Collector Breakdown BVECO 7 V IEC= 100µA 3
Collector-Emitter Dark Current ICEO 100 nA VCE= 24V, IF= 0mA 3
Collector-Emitter Dark Current (Ta=85°C) ICEO 50 uA VCE= 24V, IF=0mA, Ta=85˚C 3
Current Transfer Ratio (CT785GR) CTR 100 300 % IF= 5mA, VCE= 5V 3
Saturated CTR (CT785GR) CTR(sat) 30 % IF= 1mA, VCE= 0.4V 3
Collector-Emitter Saturation Voltage VCE(SAT) 0.2 0.4 V IF= 8mA, IC= 2.4mA 3
Isolation Capacitance CIO 0.25 1 pF f= 1MHz 3
Rise Time tr 16 µs IC= 2mA, VCE= 2V, RL= 100Ω 4
Fall Time tf 16 µs IC= 2mA, VCE= 2V, RL= 100Ω 4
Turn-on time ton 20 µs IC= 2mA, VCE= 2V, RL= 100Ω 4
Turn-off time toff 20 µs IC= 2mA, VCE= 2V, RL= 100Ω 4

CAD (KiCad official)

  • Symbol: CT785GR
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: ct785gr-etched.step / ct785gr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ct785gr.step / ct785gr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CT Micro International datasheet (14 pp, sha256 4d8d604a612b7423, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF