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CT304B-800S

Changjiang Electronics Tech (CJ) · TRIACs · TO-220

CT304B-800S from Changjiang Electronics Tech (CJ), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 MAIN TERMINAL 1 (MT1) passive Main terminal 1 of the TRIAC, which carries the main on-state current with an RMS rating of IT(RMS) 4 A and a non-repetitive surge peak of 40 A (Tj(init)=25℃, tp=20ms).
2 MAIN TERMINAL 2 (MT2) passive Main terminal 2 of the TRIAC, which is rated for the 800 V repetitive peak off-state voltage (VDRM/VRRM) of the CT304B-800S variant and 4 A RMS on-state current.
3 GATE input Gate terminal used to trigger the TRIAC, with a peak gate current IGM of 4 A (tp=20µs, Tj=125℃), an average gate power PG(AV) of 1 W, a gate trigger voltage VGT of at most 1.3 V, and a gate trigger current IGT of at most 10 mA for the S suffix.

Key specifications

Parameter Value
Manufacturer Changjiang Electronics Tech (CJ)
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
RMS on-state current IT(RMS) 4 A TO-220BK(TC≤110℃), Fig. 1,2 1
Repetitive peak off-state voltage (800V variant) VDRM/VRRM 800 V Tj=25℃ 1
Non repetitive surge peak on-state current ITSM 40 A Full sine wave, Tj(init)=25℃, tp=20ms; Fig. 3,5 1
I2t value I2t 8 A2s tp=10ms 1
Critical rate of rise of on-state current dIT/dt 50 A/μs IG=2*IGT, tr≤10ns, F=120HZ, Tj=125℃ 1
Peak gate current IGM 4 A tp=20µs, Tj=125℃ 1
Average gate power PG(AV) 1 W Tj=125℃ 1
Storage temperature TSTG -40 150 ℃ 1
Operating junction temperature Tj -40 125 ℃ 1
Gate trigger current Ⅰ-Ⅱ-Ⅲ (S: IGT1-3≤10mA) IGT 10 mA VD=12V, Tj=25℃, RL=30Ω 2
Gate trigger voltage Ⅰ-Ⅱ-Ⅲ VGT 1.3 V VD=12V, Tj=25℃, RL=30Ω 2
Non-triggering gate voltage VGD 0.2 V VD=VDRM, Tj=125℃ 2
Holding current (S column) IH 15 mA 2
Latching current Ⅰ-Ⅲ (S column) IL 25 mA IT=100mA, IG=1.2IGT 2
Latching current Ⅱ (S column) IL 30 mA IT=100mA, IG=1.2IGT 2
Critical rate of rise of off-state voltage (S column) dVD/dt 40 V/μs VD=67%VDRM, Gate Open, Tj=125℃ 2
On-state voltage VTM 1.55 V ITM=8.5A, tp=380μs, Fig. 4 2
Repetitive peak off-state current at Tj=25℃ IDRM 5 μA VD=VDRM/VRRM, Tj=25℃ 2
Repetitive peak off-state current at Tj=125℃ IRRM 5 mA VD=VDRM/VRRM, Tj=125℃ 2
Thermal resistance junction to case (AC) Rth (j-c) 2.6 ℃/W AC 2
Thermal resistance junction to ambient Rth (j-a) 60 ℃/W 2

CAD (KiCad official)

  • Symbol: CT304B-800S
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ct304b-800s-etched.step / ct304b-800s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ct304b-800s.step / ct304b-800s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjiang Electronics Tech (CJ) datasheet (4 pp, sha256 63ac3b7b85f088b4, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF