CSD87334Q3D

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  "title": "CSD87334Q3D",
  "brief": "Texas Instruments MOSFETs, HVSON-8-EP(3x3). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "CSD87334Q3D",
    "manufacturer": "Texas Instruments",
    "package": "HVSON-8-EP(3x3)",
    "pin_count": 9,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.ti.com/lit/ds/symlink/csd87334q3d.pdf",
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      "digikey": "296-51021-2-ND",
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        "number": "1",
        "name": "VIN",
        "type": "power_in",
        "description": "Power block input supply (control FET drain), rated up to 24 V recommended and 30 V absolute maximum to PGND, with ceramic input capacitors placed as close as possible to VIN and PGND."
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      {
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        "name": "VIN",
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        "description": "Power block input supply (control FET drain), rated up to 24 V recommended and 30 V absolute maximum to PGND, with ceramic input capacitors placed as close as possible to VIN and PGND."
      },
      {
        "number": "3",
        "name": "TG",
        "type": "input",
        "description": "Control FET gate, connected to the high-side output of the driver IC, with TG to TGR limited to -0.3 V to 10 V absolute maximum."
      },
      {
        "number": "4",
        "name": "TGR",
        "type": "passive",
        "description": "Return path of the high-side gate drive, connected to the driver IC phase pin (LL/SW) together with the bootstrap capacitor."
      },
      {
        "number": "5",
        "name": "BG",
        "type": "input",
        "description": "Sync FET gate, connected to the low-side output of the driver IC, with BG to PGND limited to -0.3 V to 10 V absolute maximum."
      },
      {
        "number": "6",
        "name": "VSW",
        "type": "passive",
        "description": "Switching node of the half-bridge connected to the output inductor, rated 30 V to PGND (32 V for 10 ns) absolute maximum."
      },
      {
        "number": "7",
        "name": "VSW",
        "type": "passive",
        "description": "Switching node of the half-bridge connected to the output inductor, rated 30 V to PGND (32 V for 10 ns) absolute maximum."
      },
      {
        "number": "8",
        "name": "VSW",
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        "description": "Switching node of the half-bridge connected to the output inductor, rated 30 V to PGND (32 V for 10 ns) absolute maximum."
      },
      {
        "number": "9",
        "name": "PGND",
        "type": "power_in",
        "description": "Power ground and exposed thermal pad (sync FET source) that must be soldered to the board as the primary thermal path, with RθJC of 2.1 °C/W via the PGND pin."
      }
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