component
CSD19538Q2T
Public Made by Adomby adom
Texas Instruments Pre-ordered Chips, WSON-6(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD19538Q2T
Texas Instruments · Pre-ordered Chips · WSON-6(2x2)
CSD19538Q2T from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, tied internally to the other drain pins and the drain pad; drain-to-source voltage rated 100 V. |
| 2 | D | passive | Drain, tied internally to the other drain pins and the drain pad; drain-to-source voltage rated 100 V. |
| 3 | G | input | Gate; gate-to-source voltage limited to ±20 V, with a typical threshold of 3.2 V. |
| 4 | S | passive | Source, connected internally to the source thermal pad; continuous drain current is 14.4 A (package limited). |
| 5 | D | passive | Drain, tied internally to the other drain pins and the drain pad; drain-to-source voltage rated 100 V. |
| 6 | D | passive | Drain, tied internally to the other drain pins and the drain pad; drain-to-source voltage rated 100 V. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6(2x2) |
| Category | Interface ICs |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-source voltage | BVDSS | 100 | V | VGS = 0V, ID = 250μA | 3 | ||
| Drain-to-source leakage current | IDSS | 1 | μA | VGS = 0V, VDS = 80V | 3 | ||
| Gate-to-source leakage current | IGSS | 100 | nA | VDS = 0V, VGS = 20V | 3 | ||
| Gate-to-source threshold voltage | VGS(th) | 2.8 | 3.2 | 3.8 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-source on resistance | RDS(on) | 58 | 72 | mΩ | VGS = 6V, ID = 5A | 3 | |
| Drain-to-source on resistance | RDS(on) | 49 | 59 | mΩ | VGS = 10V, ID = 5A | 3 | |
| Input capacitance | Ciss | 349 | 454 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Output capacitance | Coss | 69 | 90 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Reverse transfer capacitance | Crss | 12.6 | 16.4 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Series gate resistance | RG | 4.6 | 9.2 | Ω | 3 | ||
| Gate charge total (10V) | Qg | 4.3 | 5.6 | nC | VDS = 50V, ID = 5A | 3 | |
| Diode forward voltage | VSD | 0.85 | 1 | V | ISD = 5A, VGS = 0V | 3 | |
| Drain-to-source voltage | VDS | 100 | V | TA = 25°C | 1 | ||
| Gate-to-source voltage | VGS | -20 | 20 | V | TA = 25°C | 1 | |
| Continuous drain current (package limited) | ID | 14.4 | A | TA = 25°C | 1 | ||
| Continuous drain current (device limited) | ID | 13.1 | A | TC = 25°C | 1 | ||
| Continuous drain current | ID | 4.6 | A | TA = 25°C, note (1) 1in2 2oz Cu pad | 1 | ||
| Pulsed drain current | IDM | 34.4 | A | pulse duration ≤ 100μs, duty cycle ≤ 1% | 1 | ||
| Power dissipation | PD | 2.5 | W | TA = 25°C, note (1) | 1 | ||
| Power dissipation | PD | 20.2 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Avalanche energy, single pulse | EAS | 8 | mJ | ID = 12.6A, L = 0.1mH, RG = 25Ω | 1 | ||
| Junction-to-case thermal resistance | RθJC | 6.2 | °C/W | 1in2 2oz Cu pad on 1.5in x 1.5in 0.06in FR4 PCB | 3 | ||
| Junction-to-ambient thermal resistance | RθJA | 65 | °C/W | Device mounted on FR4 with 1in2 2oz Cu | 3 | ||
| Junction-to-ambient thermal resistance (minimum pad) | RθJA | 250 | °C/W | mounted on a minimum pad area of 2oz Cu | 4 | ||
| Transconductance | gfs | 19 | S | VDS = 10V, ID = 5A | 3 | ||
| Gate charge gate-to-drain | Qgd | 0.8 | nC | VDS = 50V, ID = 5A | 3 | ||
| Gate charge gate-to-source | Qgs | 1.6 | nC | VDS = 50V, ID = 5A | 3 | ||
| Gate charge at Vth | Qg(th) | 1 | nC | VDS = 50V, ID = 5A | 3 | ||
| Output charge | Qoss | 12.3 | nC | VDS = 50V, VGS = 0V | 3 | ||
| Turnon delay time | td(on) | 5 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Rise time | tr | 3 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Turnoff delay time | td(off) | 7 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Fall time | tf | 2 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Reverse recovery charge | Qrr | 94 | nC | VDS = 50V, IF = 5A, di/dt = 300A/μs | 3 | ||
| Reverse recovery time | trr | 32 | ns | VDS = 50V, IF = 5A, di/dt = 300A/μs | 3 |
CAD (KiCad official)
- Symbol:
CSD19538Q2T - Footprint:
Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: WSON-6(2x2) (KiCad packages3D, STEP)
- 3D model files:
csd19538q2t-etched.step/csd19538q2t-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd19538q2t.step/csd19538q2t.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (14 pp, sha256
9a7f1dd8b9501933, retrieved 2026-10-22, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).