component
CSD19538Q2
Public Made by Adomby adom
Texas Instruments MOSFETs, WSON-6(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD19538Q2
Texas Instruments · MOSFETs · WSON-6(2x2)
CSD19538Q2 from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal, connected internally to the other drain pins (2, 5, 6); rated for VDS up to 100V. |
| 2 | D | passive | Drain terminal, connected internally to the other drain pins (1, 5, 6); rated for VDS up to 100V. |
| 3 | G | input | Gate terminal with VGS rated ±20V maximum and a typical threshold of 3.2V. |
| 4 | S | passive | Source terminal, connected internally to the bottom-side source pad. |
| 5 | D | passive | Drain terminal, connected internally to the other drain pins (1, 2, 6); rated for VDS up to 100V. |
| 6 | D | passive | Drain terminal, connected internally to the other drain pins (1, 2, 5); rated for VDS up to 100V. |
| 7 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | WSON-6(2x2) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-source breakdown voltage | BVDSS | 100 | V | VGS = 0V, ID = 250μA | 3 | ||
| Drain-to-source leakage current | IDSS | 1 | μA | VGS = 0V, VDS = 80V | 3 | ||
| Gate-to-source leakage current | IGSS | 100 | nA | VDS = 0V, VGS = 20V | 3 | ||
| Gate-to-source threshold voltage | VGS(th) | 2.8 | 3.2 | 3.8 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-source on resistance | RDS(on) | 58 | 72 | mΩ | VGS = 6V, ID = 5A | 3 | |
| Drain-to-source on resistance | RDS(on) | 49 | 59 | mΩ | VGS = 10V, ID = 5A | 3 | |
| Input capacitance | Ciss | 349 | 454 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Output capacitance | Coss | 69 | 90 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Reverse transfer capacitance | Crss | 12.6 | 16.4 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 | |
| Series gate resistance | RG | 4.6 | 9.2 | Ω | 3 | ||
| Gate charge total (10V) | Qg | 4.3 | 5.6 | nC | VDS = 50V, ID = 5A | 3 | |
| Diode forward voltage | VSD | 0.85 | 1 | V | ISD = 5A, VGS = 0V | 3 | |
| Drain-to-Source Voltage | VDS | 100 | V | TA = 25°C | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | TA = 25°C | 1 | |
| Continuous Drain Current (Package Limited) | ID | 14.4 | A | TA = 25°C | 1 | ||
| Continuous Drain Current (Silicon Limited) | ID | 13.1 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 4.6 | A | Typical RθJA = 50°C/W on 1 inch2, 2oz Cu pad, 0.06 inch FR4 | 1 | ||
| Pulsed Drain Current | IDM | 34.4 | A | Max RθJC = 6.2°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1% | 1 | ||
| Power Dissipation | PD | 2.5 | W | Typical RθJA = 50°C/W on 1 inch2, 2oz Cu pad, 0.06 inch FR4 | 1 | ||
| Power Dissipation | PD | 20.2 | W | TC = 25°C | 1 | ||
| Operating Junction Temperature, Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Avalanche Energy, Single Pulse | EAS | 8 | mJ | ID = 12.6A, L = 0.1mH, RG = 25Ω | 1 | ||
| Junction-to-case thermal resistance | RθJC | 6.2 | °C/W | 1in2 2oz Cu pad on 1.5in x 1.5in 0.06in FR4 PCB | 3 | ||
| Junction-to-ambient thermal resistance | RθJA | 65 | °C/W | Device mounted on FR4 with 1in2 2oz Cu | 3 | ||
| Transconductance | gfs | 19 | S | VDS = 10V, ID = 5A | 3 | ||
| Gate charge gate-to-drain | Qgd | 0.8 | nC | VDS = 50V, ID = 5A | 3 | ||
| Gate charge gate-to-source | Qgs | 1.6 | nC | VDS = 50V, ID = 5A | 3 | ||
| Gate charge at Vth | Qg(th) | 1 | nC | VDS = 50V, ID = 5A | 3 | ||
| Output charge | Qoss | 12.3 | nC | VDS = 50V, VGS = 0V | 3 | ||
| Turnon delay time | td(on) | 5 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Rise time | tr | 3 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Turnoff delay time | td(off) | 7 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Fall time | tf | 2 | ns | VDS = 50V, VGS = 10V, IDS = 5A, RG = 0Ω | 3 | ||
| Reverse recovery charge | Qrr | 94 | nC | VDS= 50V, IF = 5A, di/dt = 300A/μs | 3 | ||
| Reverse recovery time | trr | 32 | ns | VDS= 50V, IF = 5A, di/dt = 300A/μs | 3 |
CAD (KiCad official)
- Symbol:
CSD19538Q2 - Footprint:
Package_SON:WSON-6-1EP_2x2mm_P0.65mm_EP1x1.6mm - 3D model: WSON-6(2x2) (KiCad packages3D, STEP)
- 3D model files:
csd19538q2-etched.step/csd19538q2-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd19538q2.step/csd19538q2.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (16 pp, sha256
36ae97cfec969975, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).