# CSD19534KCS

**Texas Instruments** · MOSFETs · TO-220

CSD19534KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the absolute maximum gate-to-source voltage is ±20 V. |
| 2 | Drain | passive | Drain terminal of the MOSFET; the absolute maximum drain-to-source voltage is 100 V. |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the gate-to-source voltage; the datasheet gives no separate pin-specific rating for it. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage (absolute maximum) | VDS |  |  | 100 | V |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (Package limited) | ID |  |  | 100 | A |  | 1 |
| Continuous Drain Current (Silicon limited) | ID |  |  | 54 | A | TC = 25°C | 1 |
| Continuous Drain Current (Silicon limited) | ID |  |  | 38 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM |  |  | 138 | A | pulse duration ≤100μs, duty cycle ≤1% | 1 |
| Power Dissipation | PD |  |  | 118 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55 |  | 175 | °C |  | 1 |
| Avalanche Energy, single pulse | EAS |  |  | 54 | mJ | ID = 33A, L = 0.1mH, RG = 25Ω | 1 |
| Gate-to-Source Threshold Voltage | VGS(th) | 2.4 | 2.8 | 3.4 | V | VDS = VGS, ID = 250μA | 3 |
| Drain-to-Source On-Resistance (VGS = 6V) | RDS(on) |  | 16.3 | 20 | mΩ | VGS = 6V, ID = 30A | 3 |
| Drain-to-Source On-Resistance (VGS = 10V) | RDS(on) |  | 13.7 | 16.5 | mΩ | VGS = 10V, ID = 30A | 3 |
| Input Capacitance | Ciss |  | 1290 | 1670 | pF | VGS = 0V, VDS = 50V, ƒ = 1MHz | 3 |
| Output Capacitance | Coss |  | 257 | 334 | pF |  | 3 |
| Reverse Transfer Capacitance | Crss |  | 5.7 | 7.4 | pF |  | 3 |
| Series Gate Resistance | RG |  | 1.1 | 2.2 | Ω |  | 3 |
| Gate Charge Total (10V) | Qg |  | 17.1 | 22.2 | nC | VDS = 50V, ID = 30A | 3 |
| Diode Forward Voltage | VSD |  | 0.9 | 1.1 | V | ISD = 30A, VGS = 0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 1.3 | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `CSD19534KCS`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `csd19534kcs-etched.step` / `csd19534kcs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd19534kcs.step` / `csd19534kcs.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/csd19534kcs.pdf) (13 pp, sha256 `9945c084fe48d5f4`, retrieved 2026-10-17, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/csd19534kcs-datasheet.pdf)