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CSD18535KCS

Texas Instruments · MOSFETs · TO-220AB-3

CSD18535KCS from Texas Instruments, in a TO-220AB-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the MOSFET; the device absolute maximum gate-to-source voltage VGS is ±20 V.
2 Drain passive Drain terminal of the MOSFET; the device absolute maximum drain-to-source voltage VDS is 60 V, with continuous drain current limited to 200 A by the package.
3 Source passive Source terminal of the MOSFET, the reference for the gate-to-source voltage VGS.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package TO-220AB-3
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage BVDSS 60 V VGS = 0V, ID = 250μA 3
Drain-to-Source Leakage Current IDSS 1 μA VGS = 0V, VDS = 48V 3
Gate-to-Source Leakage Current IGSS 100 nA VDS = 0V, VGS = 20V 3
Gate-to-Source Threshold Voltage VGS(th) 1.4 1.9 2.4 V VDS = VGS, ID = 250μA 3
Drain-to-Source On-Resistance RDS(on) 2.3 2.9 mΩ VGS = 4.5V, ID = 100A 3
Drain-to-Source On-Resistance RDS(on) 1.6 2 mΩ VGS = 10V, ID = 100A 3
Input Capacitance Ciss 5090 6620 pF VGS = 0V, VDS = 30V, ƒ = 1MHz 3
Output Capacitance Coss 890 1150 pF VGS = 0V, VDS = 30V, ƒ = 1MHz 3
Reverse Transfer Capacitance Crss 24 31 pF VGS = 0V, VDS = 30V, ƒ = 1MHz 3
Series Gate Resistance RG 0.8 1.6 Ω 3
Gate Charge Total (10V) Qg 63 81 nC VDS = 30V, ID = 100A 3
Diode Forward Voltage VSD 0.9 1 V ISD = 100A, VGS = 0V 3
Drain-to-Source Voltage VDS 60 V 1
Gate-to-Source Voltage VGS -20 20 V 1
Continuous Drain Current (Package limited) ID 200 A Package limited 1
Continuous Drain Current (Silicon limited) ID 279 A Silicon limited, TC = 25°C 1
Continuous Drain Current (Silicon limited) ID 197 A Silicon limited, TC = 100°C 1
Pulsed Drain Current IDM 400 A Note 1: pulse duration ≤100μs, duty cycle ≤1% 1
Power Dissipation PD 300 W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Avalanche Energy, single pulse EAS 616 mJ ID = 111A, L = 0.1mH, RG = 25Ω 1
Transconductance gfs 263 S VDS = 6V, ID = 100A 3
Gate Charge Gate-to-Drain Qgd 10.4 nC 3
Gate Charge Gate-to-Source Qgs 15.7 nC 3
Gate Charge at Vth Qg(th) 9.4 nC 3
Output Charge Qoss 140 nC VDS = 30V, VGS = 0V 3
Turn On Delay Time td(on) 9 ns VDS = 30V, VGS = 10V, IDS = 100A, RG = 0Ω 3
Rise Time tr 3 ns 3
Turn Off Delay Time td(off) 19 ns 3
Fall Time tf 3 ns 3
Reverse Recovery Charge Qrr 214 nC VDS = 30V, IF = 100A, di/dt = 300A/μs 3
Reverse Recovery Time trr 63 ns 3
Junction-to-Case Thermal Resistance RθJC 0.5 °C/W 3
Junction-to-Ambient Thermal Resistance RθJA 62 °C/W 3

CAD (KiCad official)

  • Symbol: CSD18535KCS
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB-3 (KiCad packages3D, STEP)
  • 3D model files: csd18535kcs-etched.step / csd18535kcs-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); csd18535kcs.step / csd18535kcs.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (13 pp, sha256 55894e8461dc3663, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF