component
CSD18510KCS
Public Made by Adomby adom
Texas Instruments MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CSD18510KCS
Texas Instruments · MOSFETs · TO-220
CSD18510KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; gate-to-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 40 V with continuous drain current of 200 A (package limited). |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the ±20 V gate-to-source rating in the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current (Package Limited) | ID | 200 | A | Package limited | 1 | ||
| Continuous Drain Current (Silicon Limited), TC = 25°C | ID | 288 | A | TC = 25°C | 1 | ||
| Continuous Drain Current (Silicon Limited), TC = 100°C | ID | 204 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | 400 | A | 1 | |||
| Power Dissipation | PD | 250 | W | 1 | |||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Avalanche Energy, Single Pulse | EAS | 328 | mJ | ID = 81A, L = 0.1mH, RG = 25Ω | 1 | ||
| Gate-to-source threshold voltage | VGS(th) | 1.4 | 1.7 | 2.3 | V | VDS = VGS, ID = 250μA | 3 |
| Junction-to-case thermal resistance | RθJC | 0.6 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
CSD18510KCS - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
csd18510kcs-etched.step/csd18510kcs-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd18510kcs.step/csd18510kcs.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (13 pp, sha256
a9574f5914466341, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CSD18510KCS
**Texas Instruments** · MOSFETs · TO-220
CSD18510KCS from Texas Instruments, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; gate-to-source voltage is rated ±20 V in the absolute maximum ratings. |
| 2 | Drain | passive | Drain terminal of the MOSFET; drain-to-source voltage is rated 40 V with continuous drain current of 200 A (package limited). |
| 3 | Source | passive | Source terminal of the MOSFET, the reference for the ±20 V gate-to-source rating in the absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | | | 40 | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current (Package Limited) | ID | | | 200 | A | Package limited | 1 |
| Continuous Drain Current (Silicon Limited), TC = 25°C | ID | | | 288 | A | TC = 25°C | 1 |
| Continuous Drain Current (Silicon Limited), TC = 100°C | ID | | | 204 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | | | 400 | A | | 1 |
| Power Dissipation | PD | | | 250 | W | | 1 |
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Avalanche Energy, Single Pulse | EAS | | | 328 | mJ | ID = 81A, L = 0.1mH, RG = 25Ω | 1 |
| Gate-to-source threshold voltage | VGS(th) | 1.4 | 1.7 | 2.3 | V | VDS = VGS, ID = 250μA | 3 |
| Junction-to-case thermal resistance | RθJC | | | 0.6 | °C/W | | 3 |
## CAD (KiCad official)
- Symbol: `CSD18510KCS`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `csd18510kcs-etched.step` / `csd18510kcs-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `csd18510kcs.step` / `csd18510kcs.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/csd18510kcs.pdf) (13 pp, sha256 `a9574f5914466341`, retrieved 2026-11-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/csd18510kcs-datasheet.pdf)