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Contents

README

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CSD18504Q5A-HXY

HXY MOSFET · MOSFETs · DFN-8(5x6)

CSD18504Q5A-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal (pin 1, marked by the Pin 1 arrow); the device is rated VDS 40V and ID 55A at TC=25℃.
2 S passive Source terminal, connected in parallel with the other source pins; ID is 55A at TC=25℃ and 41A at TC=100℃.
3 S passive Source terminal, connected in parallel with the other source pins; the continuous source current IS is 140A.
4 G input Gate terminal with a ±20V maximum gate-source voltage; the threshold VGS(th) is 1.2V min to 2.5V max, and the device operates with gate voltages as low as 4.5V.
5 D passive Drain terminal with a 40V maximum drain-source voltage; RDS(ON) is below 8.5mΩ at VGS=10V.
6 D passive Drain terminal, connected in parallel with the other drain pins; the pulsed drain current IDM is 280A.
7 D passive Drain terminal, connected in parallel with the other drain pins; the drain-source breakdown voltage is 40V min at ID=250uA.
8 D passive Drain terminal, connected in parallel with the other drain pins; the drain leakage IDSS is 1uA max at VDS=40V, TJ=25℃.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package DFN-8(5x6)
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7.5 8.5 mΩ VGS=10V, ID=15A 2
Static Drain-Source On-Resistance RDS(ON) 9 12 mΩ VGS=4.5V, ID=8A 2
Gate Threshold Voltage VGS(th) 1.2 1.8 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=40V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=40V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Continuous Source Current IS 140 A VG=VD=0V, Force Current 2
Diode Forward Voltage VSD 1 V VGS=0V, IS=1A, TJ=25℃ 2
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 55 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 41 A VGS @ 10V 1
Pulsed Drain Current IDM 280 A 1
Single Pulse Avalanche Energy EAS 76 mJ 1
Storage Temperature Range TSTG -55 175 ℃ 1
Operating Junction Temperature Range TJ -55 175 ℃ 1

CAD (KiCad official)

  • Symbol: CSD18504Q5A-HXY
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
  • 3D model files: csd18504q5a-hxy-etched.step / csd18504q5a-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); csd18504q5a-hxy.step / csd18504q5a-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 bd19f65d8e9b10b1, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF