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CSD17506Q5A-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, DFN-8(5x6). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCSD17506Q5A-HXY
HXY MOSFET · MOSFETs · DFN-8(5x6)
CSD17506Q5A-HXY from HXY MOSFET, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied with pins 2 and 3; continuous current rated 120A at TC=25°C. |
| 2 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 3; continuous current rated 120A at TC=25°C. |
| 3 | S | passive | Source of the N-channel MOSFET, tied with pins 1 and 2; continuous current rated 120A at TC=25°C. |
| 4 | G | input | Gate of the N-channel MOSFET; VGS max ±20V, threshold 1V to 2.5V, usable down to 4.5V gate drive. |
| 5 | D | passive | Drain of the N-channel MOSFET, tied with pins 6-8; VDS max 30V. |
| 6 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 7 and 8; VDS max 30V. |
| 7 | D | passive | Drain of the N-channel MOSFET, tied with pins 5, 6 and 8; VDS max 30V. |
| 8 | D | passive | Drain of the N-channel MOSFET, tied with pins 5-7; VDS max 30V, pulsed drain current 360A. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | DFN-8(5x6) |
| Category | Triode/MOS Tube/Transistor |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | TC=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25°C | 1 | |
| Continuous Drain Current | ID@TC=25℃ | 120 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | 57 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 360 | A | TC=25°C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 125 | mJ | TC=25°C | 1 | ||
| Total Power Dissipation | PD | 115 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 62 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 1.3 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=30V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 2.6 | 3.3 | mΩ | VGS=10V,ID=20A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 3.8 | 5 | mΩ | VGS=4.5V,ID=10A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | 1 | V | VGS=0V,IS=1A | 2 | ||
| Continuous Source Current | IS | 120 | A | 2 | |||
| Pulsed Source Current | ISM | 360 | A | 2 | |||
| Input Capacitance | Ciss | 2218 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 480 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 340 | pF | VDS=25V, VGS=0V, f=1MHz | 2 | ||
| Turn-On Delay Time | td(on) | 12.6 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Rise Time | tr | 19.5 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Turn-Off Delay Time | td(off) | 42.8 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Fall Time | tf | 13.2 | ns | VDD=15V,ID=15A,RG=3.3Ω VGS=10V | 2 | ||
| Total Gate Charge | Qg | 24 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | ||
| Gate-Source Charge | Qgs | 4.2 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | ||
| Gate-Drain Miller Charge | Qgd | 13 | nC | VGS=4.5V, VDS=15V, ID=20A | 2 | ||
| Reverse Recovery Time | Trr | 258 | NS | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 | ||
| Reverse Recovery Charge | Qrr | 324 | NC | IS=1A, di/dt=100A/µs, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
CSD17506Q5A-HXY - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files:
csd17506q5a-hxy-etched.step/csd17506q5a-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);csd17506q5a-hxy.step/csd17506q5a-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (6 pp, sha256
6c1bf6e6fe8b9769, retrieved 2026-10-24, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).