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Contents

README

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CSD17302Q5A

Texas Instruments · MOSFETs · DFN-8(4.9x5.7)

CSD17302Q5A from Texas Instruments, in a DFN-8(4.9x5.7). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the 30V N-channel NexFET, rated for 87A continuous at TC = 25°C.
2 D passive Drain of the 30V N-channel NexFET, rated for 87A continuous at TC = 25°C.
3 D passive Drain of the 30V N-channel NexFET, rated for 87A continuous at TC = 25°C.
4 D passive Drain of the 30V N-channel NexFET, rated for 87A continuous at TC = 25°C.
5 G input Gate, with gate-to-source voltage rating of +10/-8 V and optimized for 5V gate drive.
6 S passive Source of the MOSFET.
7 S passive Source of the MOSFET.
8 S passive Source of the MOSFET.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package DFN-8(4.9x5.7)
Category Transistors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Voltage VDS 30 V 1
Gate to Source Voltage VGS -8 10 V 1
Continuous Drain Current ID 87 A TC = 25°C 1
Continuous Drain Current ID 16 A 1
Pulsed Drain Current IDM 104 A TA = 25°C, pulse duration ≤300ms, duty cycle ≤2% 1
Power Dissipation PD 3 W Footnote (1) 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 150 °C 1
Avalanche Energy, single pulse EAS 61 mJ ID = 35A, L = 0.1mH, RG = 25Ω 1
Drain to Source Voltage BVDSS 30 V VGS = 0V, ID = 250mA 2
Drain to Source Leakage Current IDSS 1 mA VGS = 0V, VDS = 24V 2
Gate to Source Leakage Current IGSS 100 nA VDS = 0V, VGS = +10 / -8V 2
Gate to Source Threshold Voltage VGS(th) 0.9 1.2 1.7 V VDS = VGS, ID = 250mA 2
Drain to Source On Resistance RDS(on) 9.5 mΩ VGS = 3V, ID = 14A 2
Drain to Source On Resistance RDS(on) 7.3 9 mΩ VGS = 4.5V, ID = 14A 2
Drain to Source On Resistance RDS(on) 6.4 7.9 mΩ VGS = 8V, ID = 14A 2
Input Capacitance Ciss 730 950 pF 2
Output Capacitance Coss 390 510 pF VGS = 0V, VDS = 15V, f = 1MHz 2
Reverse Transfer Capacitance Crss 35 45 pF 2
Series Gate Resistance RG 0.8 1.6 Ω 2
Gate Charge Total (4.5V) Qg 5.4 7 nC 2
Diode Forward Voltage VSD 0.85 1 V ISD = 14A, VGS = 0V 2
Thermal Resistance Junction to Case RθJC 1.8 °C/W Footnote (1) 2
Thermal Resistance Junction to Ambient RθJA 51 °C/W Footnotes (1)(2) 2

CAD (KiCad official)

  • Symbol: CSD17302Q5A
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN-8(4.9x5.7) (KiCad packages3D, STEP)
  • 3D model files: csd17302q5a-etched.step / csd17302q5a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); csd17302q5a.step / csd17302q5a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (10 pp, sha256 a10d642277e6d56a, retrieved 2026-11-10, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF