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Contents

README

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CS9N90ANHD

CRMICRO · MOSFETs · TO-3P

CS9N90ANHD from CRMICRO, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rated ±30 V, with built-in back-to-back Zener diodes (VGSO 30 V at IGS=±1 mA) for ESD protection (6000 V HBM).
2 D passive Drain; drain-to-source voltage rated 900 V, continuous drain current 9 A (5.8 A at TC=100 °C), pulsed 36 A.
3 S passive Source; body diode continuous current 9 A and pulsed 36 A, forward voltage max 1.5 V at IS=9.0 A.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-3P
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Breakdown Voltage VDSS 900 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 25 µA VDS=900V, VGS=0V, Ta=25℃ 2
Drain to Source Leakage Current IDSS 250 µA VDS=720V, VGS=0V, Ta=125℃ 2
Gate to Source Forward Leakage IGSS(F) 10 µA VGS=+20V 2
Gate to Source Reverse Leakage IGSS(R) -10 µA VGS=-20V 2
Drain-to-Source On-Resistance RDS(ON) 0.95 1.3 Ω VGS=10V,ID=4.5A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Forward Trans conductance gfs 10 S VDS=15V, ID=4.5A 2
Continuous Source Current (Body Diode) IS 9 A 3
Maximum Pulsed Current (Body Diode) ISM 36 A 3
Diode Forward Voltage VSD 1.5 V IS=9.0A, VGS=0V 3
Gate-source breakdown voltage VGSO 30 V IGS= ±1mA (Open Drain) 3
Drain-to-Source Voltage VDSS 900 V 1
Continuous Drain Current ID 9 A 1
Continuous Drain Current ID 5.8 A TC = 100 °C 1
Pulsed Drain Current IDM 36 A 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 1000 mJ L=20mH, Vdd=50V, TJ=25℃ (footnote a3) 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=9A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ (footnote a2) 1
Power Dissipation PD 150 W TC=25℃ 1
Gate source ESD (HBM) VESD(G-S) 6000 V HBM C=100pF, R=1.5kΩ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Junction-to-Case RθJC 0.83 ℃/W 3
Junction-to-Ambient RθJA 40 ℃/W 3

CAD (KiCad official)

  • Symbol: CS9N90ANHD
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3P (KiCad packages3D, STEP)
  • 3D model files: cs9n90anhd-etched.step / cs9n90anhd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs9n90anhd.step / cs9n90anhd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 f2da1db7f861d414, retrieved 2026-11-06, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF