component
CS70N30ANR
Public Made by Adomby adom
CRMICRO MOSFETs, TO-3P. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
CS70N30ANR
CRMICRO · MOSFETs · TO-3P
CS70N30ANR from CRMICRO, in a TO-3P. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS=10V for the stated RDS(ON), absolute maximum gate-to-source voltage ±30 V. |
| 2 | D | passive | Drain; 300 V drain-to-source breakdown voltage minimum and 70 A continuous drain current at TC=25 °C (also connected to the mounting tab by package convention not stated in text). |
| 3 | S | passive | Source; body diode continuous source current up to 70 A and pulsed 280 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-3P |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current | ID | 70 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 42 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 280 | A | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 3450 | mJ | L=10.0mH, ID=26.3A, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD =70A, di/dt ≤300A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 250 | W | TC = 25 °C | 1 | ||
| Derating Factor above 25°C | 2 | W/℃ | above 25°C | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Drain to Source Breakdown Voltage | VDSS | 300 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS =300V, VGS= 0V, TJ = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS =240V, VGS= 0V, TJ = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VDS =0V, VGS= 30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VDS =0V, VGS= -30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 36 | 42 | mΩ | VGS=10V, ID=35A; pulse width tp≤300µs, δ≤2% | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA; pulse width tp≤300µs, δ≤2% | 2 | |
| Continuous Source Current (Body Diode) | IS | 70 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 280 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=70A, VGS=0V | 3 | ||
| Junction-to-Case | RθJC | 0.5 | ℃/W | 3 | |||
| Junction-to-Ambient | RθJA | 40 | ℃/W | 3 | |||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.3 | V/℃ | ID=250uA, Reference 25℃ | 2 | ||
| Forward Trans conductance | gfs | 9 | S | VDS=15V, ID=35A | 2 | ||
| Gate resistance | Rg | 3.2 | Ω | f = 1.0MHz | 2 | ||
| Input Capacitance | Ciss | 8280 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | 2 | ||
| Output Capacitance | Coss | 900 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 107 | pF | VGS = 0V, VDS = 25V, f = 1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 82.4 | ns | ID =70A, VDD = 150V, RG = 25Ω | 2 | ||
| Rise Time | tr | 301.6 | ns | ID =70A, VDD = 150V, RG = 25Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 196 | ns | ID =70A, VDD = 150V, RG = 25Ω | 2 | ||
| Fall Time | tf | 135 | ns | ID =70A, VDD = 150V, RG = 25Ω | 2 | ||
| Total Gate Charge | Qg | 136.2 | nC | ID =70A, VDD =240V, VGS = 10V | 2 | ||
| Gate to Source Charge | Qgs | 42.8 | nC | ID =70A, VDD =240V, VGS = 10V | 2 | ||
| Gate to Drain (Miller) Charge | Qgd | 47.5 | nC | ID =70A, VDD =240V, VGS = 10V | 2 | ||
| Reverse Recovery Time | trr | 336 | ns | IS=70A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 3460 | nC | IS=70A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Current | IRRM | 20.6 | A | IS=70A, Tj = 25°C, dIF/dt=100A/us, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
CS70N30ANR - Footprint:
Package_TO_SOT_THT:TO-3P-3_Vertical - 3D model: TO-3P (KiCad packages3D, STEP)
- 3D model files:
cs70n30anr-etched.step/cs70n30anr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs70n30anr.step/cs70n30anr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (10 pp, sha256
fb24997dfe0ad9cb, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).