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CS4N70FA9R

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Wuxi China Resources Huajing Microelectronics MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorscs4n70fa9rfactory-2.0.0extractor-text

Verified CS4N70FA9R

by Ray · last 12 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

12 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: CS4N70FA9R · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 10-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-b7mcy7wl/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • ✓package_fit: thickness within the datasheet's package drawing (vertical TO package); standing height not judged: the drawing read gives no overall height (H, H1 or L) (datasheet p.9)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 16 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ cs4n70fa9r.kicad_sym✓ cs4n70fa9r.kicad_mod✓ cs4n70fa9r.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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docs Publish 0.1.0 · Ray
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cs4n70fa9r-hero.overlay.json Publish 0.1.0 · Ray
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README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

CS4N70FA9R

Wuxi China Resources Huajing Microelectronics · MOSFETs · TO-220F

CS4N70FA9R from Wuxi China Resources Huajing Microelectronics, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control input, rated for ±30 V gate-to-source voltage with a 2.0 to 4.0 V threshold at 250 µA.
2 Drain passive Drain terminal, rated for 700 V drain-to-source voltage and 4 A continuous drain current.
3 Source passive Source terminal, also the body-diode anode with 4 A continuous source current.

Key specifications

Parameter Value
Manufacturer Wuxi China Resources Huajing Microelectronics
Package TO-220F
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 700 V 1
Continuous Drain Current ID 4 A 1
Continuous Drain Current ID 2.5 A TC = 100 °C 1
Pulsed Drain Current IDM 28 A 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 196 mJ L=10mH, ID=6.3A, Start TJ=25℃ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD=4A, di/dt ≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Power Dissipation PD 30 W Tc = 25℃ unless otherwise specified 1
Derating Factor above 25°C 0.24 W/℃ above 25°C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Drain to Source Breakdown Voltage VDSS 700 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS=700V, VGS=0V, Ta = 25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS=560V, VGS=0V, Ta = 125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS=-30V 2
Drain-to-Source On-Resistance RDS(ON) 2.55 3 Ω VGS=10V, ID=2A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA 2
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.7 V/℃ ID=250uA, Reference 25℃ 2
Forward Transconductance gfs 3.7 S VDS=15V, ID =2A 2
Input Capacitance Ciss 606 pF VGS = 0V, VDS = 25V, f = 1.0MHz 2
Output Capacitance Coss 48 pF VGS = 0V, VDS = 25V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 2.7 pF VGS = 0V, VDS = 25V, f = 1.0MHz 2
Turn-on Delay Time td(ON) 14 ns ID =4A, VDD = 350V, RG =10Ω 2
Rise Time tr 15 ns ID =4A, VDD = 350V, RG =10Ω 2
Turn-Off Delay Time td(OFF) 30 ns ID =4A, VDD = 350V, RG =10Ω 2
Fall Time tf 9 ns ID =4A, VDD = 350V, RG =10Ω 2
Total Gate Charge Qg 12.7 nC ID =4A, VDD =560V, VGS = 10V 2
Gate to Source Charge Qgs 3 nC ID =4A, VDD =560V, VGS = 10V 2
Gate to Drain (Miller) Charge Qgd 5.1 nC ID =4A, VDD =560V, VGS = 10V 2
Continuous Source Current (Body Diode) IS 4 A 3
Maximum Pulsed Current (Body Diode) ISM 16 A 3
Diode Forward Voltage VSD 1.5 V IS=4A, VGS=0V 3
Reverse Recovery Time trr 325.3 ns IS=4A, Tj = 25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 1470 nC IS=4A, Tj = 25℃, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Current IRRM 9 A IS=4A, Tj = 25℃, dIF/dt=100A/us, VGS=0V 3
Junction-to-Case RθJC 4.17 ℃/W 3
Junction-to-Ambient RθJA 62.5 ℃/W 3

CAD (KiCad official)

  • Symbol: CS4N70FA9R
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256 0c4a606d28ad4831, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF