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CS4N65A5

Public Made by Adom

by adom

SEP MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CS4N65A5

SEP · MOSFETs · TO-252

CS4N65A5 from SEP, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±30 V, with threshold VGS(th) of 2 to 4 V at VDS = VGS, ID = 250 µA.
2 D passive Drain, connected to the exposed tab; VDS max 650 V and continuous drain current 4 A (pulsed 16 A).
3 S passive Source; the body diode is rated 4 A continuous (16 A pulsed) with VSD max 1.4 V at ISD = 4 A.

Key specifications

Parameter Value
Manufacturer SEP
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 650 V 2
Gate-Source Voltage VGS -30 30 V 2
Continue Drain Current ID 4 A 2
Pulsed Drain Current IDM 16 A Note1: pulse test, 300 µs pulse width, 2% duty cycle 2
Power Dissipation (TO-251/252 column) PD 75 W 2
Single Pulse Avalanche Energy EAS 200 mJ Note1 2
Operating Temperature Range TJ 150 °C 2
Storage Temperature Range TSTG -55 150 °C 2
Thermal Resistance, Junction to Case (TO-251/252 column) RθJC 1.67 °C/W 2
Thermal Resistance, Junction to Ambient (TO-251/252 column) RθJA 100 °C/W 2
Drain-Source Breakdown Voltage BVDSS 650 670 V VGS = 0 V, ID = 250 µA 2
Drain-Source Leakage Current IDSS 1 µA VDS = 650 V, VGS = 0 V 2
Gate Leakage Current IGSS -100 100 nA VGS = ± 30 V, VDS = 0 V 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 2
Drain-Source On-State Resistance RDS(on) 2.1 2.8 Ω VGS = 10 V, ID = 2 A 2
Maximum Body-Diode Continuous Current IS 4 A 2
Maximum Body-Diode Pulsed Current ISM 16 A Note2: pulse test, 300 µs pulse width, 2% duty cycle 2
Drain-Source Diode Forward Voltage VSD 1.4 V ISD = 4 A 2

CAD (KiCad official)

  • Symbol: CS4N65A5
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: cs4n65a5-etched.step / cs4n65a5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cs4n65a5.step / cs4n65a5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: SEP datasheet (4 pp, sha256 b0e19d10a9b6c713, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF