# CS4N60A4R

**Wuxi China Resources Huajing Microelectronics** · MOSFETs · TO-252

CS4N60A4R from Wuxi China Resources Huajing Microelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V, with gate threshold voltage VGS(TH) of 2.0 V min to 4.0 V max at VDS = VGS, ID = 250µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 600 V, continuous drain current 4 A at TC = 25 °C and pulsed 16 A. |
| 3 | S | passive | Source; body diode continuous source current 4 A at TC = 25 °C and pulsed 16 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 600 | V | TJ=25°C | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 2.5 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 16 | A | TC = 25 °C | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 250 | mJ | L=10mH, ID=7.1A, Start TJ=25℃ | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | ISD =4A,di/dt ≤100A/us,VDD≤BVDS, Start TJ=25℃ | 1 |
| Power Dissipation | PD |  |  | 75 | W | TC = 25 °C | 1 |
| Derating Factor above 25°C |  |  | 0.6 |  | W/℃ |  | 1 |
| Operating Junction Temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | ℃ |  | 1 |
| Drain to Source Breakdown Voltage | VDSS | 600 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | µA | VDS =600V, VGS= 0V, TJ = 25℃ | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 100 | µA | VDS =480V, VGS= 0V, TJ = 125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS =+30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS =-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) |  | 2.1 | 2.5 | Ω | VGS=10V,ID=2A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 4 | A | TC = 25 °C | 3 |
| Maximum Pulsed Current (Body Diode) | ISM |  |  | 16 | A | TC = 25 °C | 3 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=4.0A,VGS=0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 1.67 | ℃/W |  | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA |  |  | 100 | ℃/W |  | 3 |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.67 |  | V/℃ | ID=250uA,Reference25℃ | 2 |
| Forward Transconductance | gfs |  | 3.5 |  | S | VDS=15V, ID =2A | 2 |
| Input Capacitance | Ciss |  | 590 |  | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Output Capacitance | Coss |  | 55 |  | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 4 |  | pF | VGS = 0V VDS = 25V f = 1.0MHz | 2 |
| Turn-on Delay Time | td(ON) |  | 14 |  | ns | ID =4A VDD = 300V RG =10Ω | 2 |
| Rise Time | tr |  | 15 |  | ns | ID =4A VDD = 300V RG =10Ω | 2 |
| Turn-Off Delay Time | td(OFF) |  | 34 |  | ns | ID =4A VDD = 300V RG =10Ω | 2 |
| Fall Time | tf |  | 13 |  | ns | ID =4A VDD = 300V RG =10Ω | 2 |
| Total Gate Charge | Qg |  | 14.5 |  | nC | ID =4A VDD =480V VGS = 10V | 2 |
| Gate to Source Charge | Qgs |  | 2.6 |  | nC | ID =4A VDD =480V VGS = 10V | 2 |
| Gate to Drain (Miller) Charge | Qgd |  | 6.5 |  | nC | ID =4A VDD =480V VGS = 10V | 2 |
| Reverse Recovery Time | trr |  | 250 |  | ns | IS=4.0A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Charge | Qrr |  | 1000 |  | nC | IS=4.0A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Current | IRRM |  | 8.03 |  | A | IS=4.0A,Tj = 25℃ dIF/dt=100A/us, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `CS4N60A4R`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `cs4n60a4r-etched.step` / `cs4n60a4r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `cs4n60a4r.step` / `cs4n60a4r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Wuxi China Resources Huajing Microelectronics datasheet](docs/cs4n60a4r-datasheet.pdf) (10 pp, sha256 `3816dc98bb2f2d8a`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/cs4n60a4r-datasheet.pdf)