component
CS45-16IO1R
Public Made by Adomby adom
IXYS TRIACs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
CS45-16IO1R
IXYS · TRIACs · TO-247-3
CS45-16IO1R from IXYS, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode of the thyristor; the device is rated for VRRM/VDRM of 1600 V and IT(RMS) of 75 A (IT(AV)M 48 A at TC = 75°C). |
| 2 | A | passive | Anode of the thyristor; the back surface is isolated in version io1R (VISOL 2500 V~, 50/60 Hz, 1 minute, leads-to-tab). |
| 3 | G | input | Gate trigger input; VGT max 1.5 V and IGT max 100 mA at 25°C with VD = 6 V, with VRGM limited to 10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | IXYS |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse/off-state voltage | VRRM | 1600 | V | CS 45-16io1R (VDRM = 1600 V) | 1 | ||
| Non-repetitive peak voltage | VRSM | 1700 | V | CS 45-16io1R (VDSM = 1700 V) | 1 | ||
| RMS on-state current | IT(RMS) | 75 | A | TVJ = TVJM | 1 | ||
| Average on-state current | IT(AV)M | 48 | A | TC = 75°C; 180° sine | 1 | ||
| Surge current 50 Hz | ITSM | 520 | A | TVJ = 45°C, t = 10 ms (50 Hz), sine, VR = 0 V | 1 | ||
| Surge current 60 Hz | ITSM | 560 | A | TVJ = 45°C, t = 8.3 ms (60 Hz), sine, VR = 0 V | 1 | ||
| Surge current 50 Hz | ITSM | 460 | A | TVJ = TVJM, t = 10 ms (50 Hz), sine, VR = 0 V | 1 | ||
| Surge current 60 Hz | ITSM | 500 | A | TVJ = TVJM, t = 8.3 ms (60 Hz), sine, VR = 0 V | 1 | ||
| I2t | I2t | 1350 | A2s | TVJ = 45°C, t = 10 ms (50 Hz), sine, VR = 0 V | 1 | ||
| I2t | I2t | 1300 | A2s | TVJ = 45°C, t = 8.3 ms (60 Hz), sine, VR = 0 V | 1 | ||
| I2t | I2t | 1050 | A2s | TVJ = TVJM, t = 10 ms (50 Hz), sine, VR = 0 V | 1 | ||
| I2t | I2t | 1030 | A2s | TVJ = TVJM, t = 8.3 ms (60 Hz), sine, VR = 0 V | 1 | ||
| Critical rate of rise of on-state current, repetitive | (di/dt)cr | 150 | A/µs | TVJ = TVJM, repetitive, IT = 40 A, f = 50 Hz, tP = 200 µs, VD = 2/3 VDRM, IG = 0.3 A, diG/dt = 0.3 A/µs | 1 | ||
| Critical rate of rise of on-state current, non-repetitive | (di/dt)cr | 500 | A/µs | non repetitive, IT = IT(AV)M | 1 | ||
| Critical rate of rise of off-state voltage | (dv/dt)cr | 1000 | V/µs | TVJ = TVJM; VDR = 2/3 VDRM; RGK = ∞; method 1 (linear voltage rise) | 1 | ||
| Peak gate power | PGM | 10 | W | TVJ = TVJM, tP = 30 µs | 1 | ||
| Peak gate power | PGM | 5 | W | IT = IT(AV)M, tP = 300 µs | 1 | ||
| Average gate power | PG(AV) | 0.5 | W | 1 | |||
| Peak reverse gate voltage | VRGM | 10 | V | 1 | |||
| Operating junction temperature | TVJ | -40 | 140 | °C | 1 | ||
| Max. junction temperature | TVJM | 140 | °C | 1 | |||
| Storage temperature | Tstg | -40 | 125 | °C | 1 | ||
| Isolation voltage | VISOL | 2500 | V~ | 50/60 Hz, RMS, t = 1 minute, leads-to-tab; version io1R only | 1 | ||
| Reverse/off-state leakage current | IR, ID | 5 | mA | TVJ = TVJM; VR = VRRM; VD = VDRM | 2 | ||
| On-state voltage | VT | 1.64 | V | IT = 80 A; TVJ = 25C | 2 | ||
| Threshold voltage | VT0 | 0.85 | V | For power-loss calculations only (TVJ = 125°C) | 2 | ||
| Gate trigger voltage | VGT | 1.5 | V | VD = 6 V; TVJ = 25°C | 2 | ||
| Gate trigger voltage | VGT | 1.6 | V | VD = 6 V; TVJ = -40°C | 2 | ||
| Gate trigger current | IGT | 100 | mA | VD = 6 V; TVJ = 25°C | 2 | ||
| Gate trigger current | IGT | 200 | mA | VD = 6 V; TVJ = -40°C | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | TVJ = TVJM; VD = 2/3 VDRM | 2 | ||
| Gate non-trigger current | IGD | 10 | mA | 2 | |||
| Latching current | IL | 150 | mA | TVJ = 25°C; tP = 10 µs; IG = 0.3 A; diG/dt = 0.3 A/µs | 2 | ||
| Holding current | IH | 100 | mA | TVJ = 25°C; VD = 6 V; RGK = ∞ | 2 | ||
| Gate controlled delay time | tgd | 2 | µs | TVJ = 25°C; VD = ½ VDRM; IG = 0.3 A; diG/dt = 0.3 A/µs | 2 | ||
| Thermal resistance junction to case | RthJC | 0.62 | K/W | DC current | 2 | ||
| Thermal resistance junction to heatsink | RthJH | 0.82 | K/W | DC current | 2 | ||
| Max. acceleration | a | 50 | m/s2 | 50 Hz | 2 |
CAD (KiCad official)
- Symbol:
CS45-16IO1R - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files:
cs45-16io1r-etched.step/cs45-16io1r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs45-16io1r.step/cs45-16io1r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: IXYS datasheet (3 pp, sha256
7ae686f785248949, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).