component
CS45-16IO1
Public Made by Adomby adom
Littelfuse IXYS Thyristors (SCR)/Modules, TO-247AD. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
CS45-16IO1
Littelfuse IXYS · Thyristors (SCR)/Modules · TO-247AD
CS45-16IO1 from Littelfuse IXYS, in a TO-247AD. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Cathode of the thyristor; the datasheet labels it C on the TO-247 AD (version io1) drawing. |
| 2 | A | passive | Anode of the thyristor, also connected to the metal tab (A (TAB)) on version io1; the tab is not isolated (VISOL is rated for version io1R only). |
| 3 | G | input | Gate trigger input; VGT max 1.5 V and IGT max 100 mA at 25°C (VD = 6 V), with VRGM of 10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Littelfuse IXYS |
| Package | TO-247AD |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage (type CS 45-16io1) | VRRM | 1600 | V | type table, CS 45-16io1 | 1 | ||
| Non-repetitive peak reverse voltage (type CS 45-16io1) | VRSM | 1700 | V | type table, CS 45-16io1 | 1 | ||
| RMS on-state current | IT(RMS) | 75 | A | TVJ = TVJM | 1 | ||
| Average on-state current | IT(AV)M | 48 | A | TC = 75°C; 180° sine | 1 | ||
| Surge on-state current | ITSM | 520 | A | TVJ = 45°C; t = 10 ms (50 Hz), sine | 1 | ||
| Surge on-state current | ITSM | 560 | A | VR = 0 V; t = 8.3 ms (60 Hz), sine | 1 | ||
| Surge on-state current | ITSM | 460 | A | TVJ = TVJM; t = 10 ms (50 Hz), sine | 1 | ||
| Surge on-state current | ITSM | 500 | A | VR = 0 V; t = 8.3 ms (60 Hz), sine | 1 | ||
| I2t value | I2t | 1350 | A²s | TVJ = 45°C; t = 10 ms (50 Hz), sine | 1 | ||
| I2t value | I2t | 1300 | A²s | VR = 0 V; t = 8.3 ms (60 Hz), sine | 1 | ||
| I2t value | I2t | 1050 | A²s | TVJ = TVJM; t = 10 ms (50 Hz), sine | 1 | ||
| I2t value | I2t | 1030 | A²s | VR = 0 V; t = 8.3 ms (60 Hz), sine | 1 | ||
| Critical rate of rise of on-state current, repetitive | (di/dt)cr | 150 | A/µs | TVJ = TVJM; repetitive, IT = 40 A; f = 50 Hz, tP = 200 µs; VD = 2/3 VDRM; IG = 0.3 A; diG/dt = 0.3 A/µs | 1 | ||
| Critical rate of rise of on-state current, non-repetitive | (di/dt)cr | 500 | A/µs | non repetitive, IT = IT(AV)M; IG = 0.3 A; diG/dt = 0.3 A/µs | 1 | ||
| Critical rate of rise of off-state voltage | (dv/dt)cr | 1000 | V/µs | TVJ = TVJM; VDR = 2/3 VDRM; RGK = ; method 1 (linear voltage rise) | 1 | ||
| Peak gate power dissipation | PGM | 10 | W | TVJ = TVJM; tP = 30 µs | 1 | ||
| Peak gate power dissipation | PGM | 5 | W | IT = IT(AV)M; tP = 300 µs | 1 | ||
| Average gate power dissipation | PG(AV) | 0.5 | W | 1 | |||
| Peak reverse gate voltage | VRGM | 10 | V | 1 | |||
| Operating junction temperature | TVJ | -40 | 140 | °C | 1 | ||
| Maximum virtual junction temperature | TVJM | 140 | °C | 1 | |||
| Storage temperature | Tstg | -40 | 125 | °C | 1 | ||
| Max. acceleration | a | 50 | m/s2 | 50 Hz | 2 | ||
| Peak reverse and off-state current | IR, ID | 5 | mA | TVJ = TVJM; VR = VRRM; VD = VDRM | 2 | ||
| On-state voltage | VT | 1.64 | V | IT = 80 A; TVJ = 25°C | 2 | ||
| On-state slope resistance | rT | 11 | mΩ | 2 | |||
| Gate trigger voltage | VGT | 1.5 | V | VD = 6 V; TVJ = 25°C | 2 | ||
| Gate trigger voltage | VGT | 1.6 | V | VD = 6 V; TVJ = -40°C | 2 | ||
| Gate trigger current | IGT | 100 | mA | VD = 6 V; TVJ = 25°C | 2 | ||
| Gate trigger current | IGT | 200 | mA | VD = 6 V; TVJ = -40°C | 2 | ||
| Gate non-trigger voltage | VGD | 0.2 | V | TVJ = TVJM; VD = 2/3 VDRM | 2 | ||
| Gate non-trigger current | IGD | 10 | mA | 2 | |||
| Latching current | IL | 150 | mA | TVJ = 25°C; tP = 10 s; IG = 0.3 A; diG/dt = 0.3 A/µs | 2 | ||
| Holding current | IH | 100 | mA | TVJ = 25°C; VD = 6 V; RGK = | 2 | ||
| Gate controlled delay time | tgd | 2 | µs | TVJ = 25°C; VD = ½ VDRM; IG = 0.3 A; diG/dt = 0.3 A/µs | 2 | ||
| Thermal resistance junction to case | RthJC | 0.62 | K/W | DC current | 2 | ||
| Thermal resistance junction to heatsink | RthJH | 0.82 | K/W | DC current | 2 | ||
| Thermal resistance junction to case, conduction angle | RthJC | 0.71 | K/W | conduction angle d = 180° | 3 | ||
| Thermal resistance junction to case, conduction angle | RthJC | 0.748 | K/W | conduction angle d = 120° | 3 | ||
| Thermal resistance junction to case, conduction angle | RthJC | 0.793 | K/W | conduction angle d = 60° | 3 | ||
| Thermal resistance junction to case, conduction angle | RthJC | 0.817 | K/W | conduction angle d = 30° | 3 | ||
| On-state voltage at power-loss calculation | VT0 | 0.85 | V | For power-loss calculations only; TVJ = 125°C | 2 |
CAD (KiCad official)
- Symbol:
CS45-16IO1 - Footprint:
Package_TO_SOT_THT:TO-247-3_Vertical - 3D model: TO-247AD (KiCad packages3D, STEP)
- 3D model files:
cs45-16io1-etched.step/cs45-16io1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs45-16io1.step/cs45-16io1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Littelfuse IXYS datasheet (3 pp, sha256
e452445e415fb0cf, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).