component
CS12N06AE-G
Public Made by Adomby adom
Wuxi China Resources Huajing Microelectronics MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdownCS12N06AE-G
Wuxi China Resources Huajing Microelectronics · MOSFETs · SOP-8
CS12N06AE-G from Wuxi China Resources Huajing Microelectronics, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source). |
| 2 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source). |
| 3 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are source). |
| 4 | G | input | Gate terminal, with gate-to-source voltage rated at ±20 V. |
| 5 | D | passive | Drain terminal, with drain-to-source voltage rated at 60 V (pins 5-8 are drain). |
| 6 | D | passive | Drain terminal, with drain-to-source voltage rated at 60 V (pins 5-8 are drain). |
| 7 | D | passive | Drain terminal, with drain-to-source voltage rated at 60 V (pins 5-8 are drain). |
| 8 | D | passive | Drain terminal, with drain-to-source voltage rated at 60 V (pins 5-8 are drain). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi China Resources Huajing Microelectronics |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | V | 1 | |||
| Continuous Drain Current | ID | 12 | A | 1 | |||
| Continuous Drain Current | ID | 8 | A | TA = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 48 | A | Repetitive rating; pulse width limited by maximum junction temperature (note a1) | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 135 | mJ | Vdd=25V, L=1mH, ID=17A, Start TJ=25°C (note a2) | 1 | ||
| Power Dissipation | PD | 3.2 | W | 1 | |||
| Operating Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 | ||
| Drain to Source Breakdown Voltage | VDSS | 60 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS = 60V, VGS= 0V, Ta = 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS = 48V, VGS= 0V, Ta = 125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS = +20V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS = -20V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 10.5 | 13.5 | mΩ | VGS=10V, ID=12A | 2 | |
| Drain-to-Source On-Resistance | RDS(ON) | 13 | 16 | mΩ | VGS=4.5V, ID=9A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.9 | 1.4 | 1.9 | V | VDS = VGS, ID = 250µA; pulse width tp≤300µs, δ≤2% | 2 |
| Diode Forward Voltage | VSD | 1.2 | V | IS=12A, VGS=0V | 3 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 40 | ℃/W | 3 | |||
| Input Capacitance | Ciss | 2370 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 164 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 123 | pF | VDS=30V, VGS=0V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 13.1 | ns | VDD =30V, ID =10A, RG = 3Ω, VGS=10V | 2 | ||
| Rise Time | tr | 25.1 | ns | VDD =30V, ID =10A, RG = 3Ω, VGS=10V | 2 | ||
| Turn-Off Delay Time | td(OFF) | 60.8 | ns | VDD =30V, ID =10A, RG = 3Ω, VGS=10V | 2 | ||
| Fall Time | tf | 9 | ns | VDD =30V, ID =10A, RG = 3Ω, VGS=10V | 2 | ||
| Total Gate Charge | Qg | 50.7 | nC | VDS=30V, ID=12A, VGS=10V | 2 | ||
| Gate to Source Charge | Qgs | 7 | nC | 2 | |||
| Gate to Drain (Miller) Charge | Qgd | 12.3 | nC | 2 | |||
| Reverse Recovery Time | Trr | 22 | ns | VGS=0V, IS=12A, di/dt=100A/µs | 3 | ||
| Reverse Recovery Charge | Qrr | 19.5 | nC | 3 |
CAD (KiCad official)
- Symbol:
CS12N06AE-G - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
cs12n06ae-g-etched.step/cs12n06ae-g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cs12n06ae-g.step/cs12n06ae-g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi China Resources Huajing Microelectronics datasheet (10 pp, sha256
de7071be248f1f83, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).