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CRTD063N04L

Public Made by Adom

by adom

CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CRTD063N04L

CRMICRO · MOSFETs · TO-252

CRTD063N04L from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with threshold VGS(th) of 1.2 V min, 1.7 V typ and 2.3 V max at 250 µA.
2 D passive Drain, the middle lead, which is also the exposed tab on the package underside; VDS is 40 V max, continuous ID is 80 A at TC=25°C (package limit) and pulsed ID is 320 A.
3 S passive Source, the lead on the opposite side from the gate; body diode forward voltage is 0.9 V typ and 1.3 V max at ISD=40 A.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 40 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current (silicon limit) ID 88 A TC = 25°C (Silicon limit) 1
Continuous drain current (package limit) ID 80 A TC = 25°C (Package limit) 1
Continuous drain current (silicon limit) ID 56 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 320 A TC = 25°C, tp limited by Tjmax 1
Avalanche energy, single pulse EAS 81 mJ L=0.5mH, Rg=25Ω 1
Power dissipation Ptot 92 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction to case RthJC 1.37 °C/W 2
Thermal resistance, junction to ambient RthJA 94 °C/W min. footprint 2
Drain-source breakdown voltage BVDSS 40 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(th) 1.2 1.7 2.3 V VDS=VGS, ID=250uA 2
Zero gate voltage drain current IDSS 0.1 1 µA VDS=40V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 5 10 µA VDS=40V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS 1 100 nA VGS=20V, VDS=0V 2
Drain-source on-state resistance RDS(on) 4.5 6.3 mΩ VGS=10V, ID=40A, Tj=25°C 2
Drain-source on-state resistance RDS(on) 5.5 7.5 mΩ VGS=4.5V, ID=30A 2
Drain-source on-state resistance RDS(on) 8.3 10 mΩ VGS=10V, ID=40A, Tj=150°C 2
Transconductance gfs 120 S VDS=5V, ID=40A 2
Gate resistance RG 1.5 Ω VGS=0V, VDS=0V, f=1MHz 2
Input capacitance Ciss 2246 pF VGS=0V, VDS=20V, f=1MHz 2
Output capacitance Coss 319 pF VGS=0V, VDS=20V, f=1MHz 2
Reverse transfer capacitance Crss 155 pF VGS=0V, VDS=20V, f=1MHz 2
Gate total charge QG 47 nC VGS=10V, VDS=20V, ID=40A, f=1MHz 2
Body diode forward voltage VSD 0.9 1.3 V VGS=0V, ISD=40A 3
Body diode reverse recovery time trr 19 ns IF=40A, dI/dt=100A/µs 3
Body diode reverse recovery charge Qrr 10 nC 3

CAD (KiCad official)

  • Symbol: CRTD063N04L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: crtd063n04l-etched.step / crtd063n04l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crtd063n04l.step / crtd063n04l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (9 pp, sha256 420fa9fcc7fa35e5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF