component
CRTD045N03L
Public Made by Adomby adom
CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| crtd045n03l-etched.glb | 24d ago |
| crtd045n03l-etched.step | 24d ago |
| crtd045n03l-hero.glb | 24d ago |
| crtd045n03l-hero.overlay.json | 24d ago |
| crtd045n03l.glb | 24d ago |
| crtd045n03l.kicad_mod | 24d ago |
| crtd045n03l.kicad_sym | 24d ago |
| crtd045n03l.lbr | 24d ago |
| crtd045n03l.step | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
CRTD045N03L
CRMICRO · MOSFETs · TO-252
CRTD045N03L from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V absolute maximum, threshold 1.3 to 2.3 V (typ 1.8 V) at ID=250 µA. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage 30 V max, continuous current 80 A (package limit) at TC=25°C. |
| 3 | S | passive | Source; carries up to 80 A continuous (package limit) and the body diode with VSD typ 0.8 V, max 1.3 V at 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Power dissipation (TC = 25°C) | Ptot | 101 | W | TC = 25°C | 1 | ||
| Drain-source voltage | VDS | 30 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (Silicon limit) | ID | 115 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (Package limit) | ID | 80 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (Silicon limit) | ID | 72 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 320 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Zero gate voltage drain current | IDSS | 0.02 | 1 | µA | VDS=30V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=30V, VGS=0V, Tj=125°C | 2 | ||
| Gate threshold voltage | VGS(th) | 1.3 | 1.8 | 2.3 | V | VDS=VGS, ID=250uA | 2 |
| Drain-source on-state resistance | RDS(on) | 3.1 | 4.5 | mΩ | VGS=10V, ID=30A, Tj=25°C | 2 | |
| Drain-source on-state resistance | RDS(on) | 4.7 | 6.5 | mΩ | VGS=4.5V, ID=15A | 2 | |
| Drain-source on-state resistance | RDS(on) | 5.2 | 6.5 | mΩ | Tj=150°C | 2 | |
| Body diode forward voltage | VSD | 0.8 | 1.3 | V | VGS=0V, ISD=20A | 3 | |
| Thermal resistance, junction to case | RthJC | 1.24 | °C/W | 2 | |||
| Thermal resistance, junction to ambient | RthJA | 94 | °C/W | min. footprint | 2 |
CAD (KiCad official)
- Symbol:
CRTD045N03L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
crtd045n03l-etched.step/crtd045n03l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crtd045n03l.step/crtd045n03l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (9 pp, sha256
57fda4ceac3dbe28, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).