component
CRST085N15N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCRST085N15N
CRMICRO · MOSFETs · TO-220
CRST085N15N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V and the gate threshold voltage is 2 to 4 V (3 V typ.) at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, also connected to the metal tab; drain-source voltage is rated 150 V with continuous current of 120 A (package limit) and pulsed current of 480 A. |
| 3 | S | passive | Source; carries the full drain current of up to 120 A continuous (package limit) and the body diode forward current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 3 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250uA | 3 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=150V, VGS=0V, Tj=25°C | 3 | ||
| Zero gate voltage drain current | IDSS | 10 | µA | VDS=150V, VGS=0V, Tj=125°C | 3 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=±20V, VDS=0V | 3 | ||
| Drain-source on-state resistance | RDS(on) | 7 | 8.5 | mΩ | VGS=10V, ID=50A, Tj=25°C, TO-220 | 3 | |
| Drain-source on-state resistance | RDS(on) | 11.3 | 14.1 | mΩ | VGS=10V, ID=50A, Tj=125°C, TO-220 | 3 | |
| Input capacitance | Ciss | 4217 | 6326 | pF | VGS=0V, VDS=75V, f=1MHz | 3 | |
| Output capacitance | Coss | 512 | 768 | pF | VGS=0V, VDS=75V, f=1MHz | 3 | |
| Reverse transfer capacitance | Crss | 38 | 57 | pF | VGS=0V, VDS=75V, f=1MHz | 3 | |
| Gate total charge | QG | 63 | 94.5 | nC | VGS=10V, VDS=75V, ID=50A | 3 | |
| Gate-source charge | Qgs | 15 | 22.5 | nC | VGS=10V, VDS=75V, ID=50A | 3 | |
| Gate-drain charge | Qgd | 21 | 31.5 | nC | VGS=10V, VDS=75V, ID=50A | 3 | |
| Threshold gate charge | Qg(th) | 13.5 | 20.3 | nC | VGS=10V, VDS=75V, ID=50A | 3 | |
| Gate resistance | RG | 3 | 5.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 4 | |
| Turn-on delay time | td(on) | 11 | 16.5 | ns | Vds=75V, Id=100A, Rg=2.7Ω, Vgs=10V | 4 | |
| Rise time | tr | 107 | 160.5 | ns | Vds=75V, Id=100A, Rg=2.7Ω, Vgs=10V | 4 | |
| Turn-off delay time | td(off) | 102 | 153 | ns | Vds=75V, Id=100A, Rg=2.7Ω, Vgs=10V | 4 | |
| Fall time | tf | 54 | 81 | ns | Vds=75V, Id=100A, Rg=2.7Ω, Vgs=10V | 4 | |
| Body diode forward voltage | VSD | 0.86 | 1.4 | V | VGS=0V, ISD=50A | 4 | |
| Body diode reverse recovery time | trr | 100 | 200 | ns | ISD=100A, VGS=0V, dIF/dt=100A/us | 4 | |
| Body diode reverse recovery charge | Qrr | 451 | 902 | nC | ISD=100A, VGS=0V, dIF/dt=100A/us | 4 | |
| Drain-source voltage | VDS | 150 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (silicon limit) | ID | 128 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (package limit) | ID | 120 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (silicon limit) | ID | 81 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 480 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Avalanche energy, single pulse | EAS | 324 | mJ | L=0.5mH, Rg=25Ω | 1 | ||
| Avalanche current | IAS | 36 | A | L=0.5mH | 1 | ||
| Repetitive avalanche energy | EAR | 64 | mJ | L=0.5mH | 1 | ||
| Repetitive avalanche current | IAR | 16 | A | L=0.5mH | 1 | ||
| Power dissipation | Ptot | 227 | W | TC = 25°C | 2 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 2 | ||
| Thermal resistance, junction-case | RthJC | 0.52 | °C/W | 3 | |||
| Thermal resistance, junction-ambient | RthJA | 60 | °C/W | min. footprint | 3 | ||
| Transconductance | gfs | 91.8 | S | VDS=5V, ID=50A | 3 |
CAD (KiCad official)
- Symbol:
CRST085N15N - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
crst085n15n-etched.step/crst085n15n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crst085n15n.step/crst085n15n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (11 pp, sha256
fa7cccb5ac74f86f, retrieved 2026-11-12, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).