CRST073N15N

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  "slug": "crst073n15n",
  "title": "CRST073N15N",
  "brief": "CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "CRST073N15N",
    "manufacturer": "CRMICRO",
    "package": "TO-220",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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        "name": "G",
        "type": "input",
        "description": "Gate; gate-source voltage is limited to ±20 V, with a typical gate threshold of VDS=VGS at ID=250uA (min 2 V)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain, also connected to the metal tab; drain-source voltage is rated 150 V and continuous drain current 135 A (silicon limit) at TC=25°C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; connects to the body diode anode and the return for drain current of up to 135 A (silicon limit) at TC=25°C."
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        "described": 3,
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        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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          28.525
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        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
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  "metadata": {
    "specs": {
      "Manufacturer": "CRMICRO",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
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          "name": "Drain-source voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 150,
          "conditions": "",
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        {
          "name": "Gate-source voltage",
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          "min": -20,
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        {
          "name": "Continuous drain current (silicon limit)",
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          "typ": null,
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          "conditions": "TC = 25°C",
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        {
          "name": "Continuous drain current (package limit)",
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          "max": 160,
          "conditions": "TC = 25°C",
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        {
          "name": "Continuous drain current (silicon limit)",
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          "min": null,
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          "max": 85,
          "conditions": "TC = 100°C",
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        {
          "name": "Pulsed drain current",
          "symbol": "ID pulse",
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          "conditions": "TC = 25°C, tp limited by Tjmax",
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          "name": "Power dissipation",
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          "unit": "W",
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          "max": 227,
          "conditions": "TC = 25°C",
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          "name": "Avalanche energy, single pulse",
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          "min": null,
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          "max": 380,
          "conditions": "L=0.5mH, Rg=25Ω (Note 1)",
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        {
          "name": "Drain-source breakdown voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
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          "min": 150,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250uA",
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        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
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          "typ": 3,
          "max": 4,
          "conditions": "VDS=VGS, ID=250uA",
          "source_page": 2,
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        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
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          "typ": null,
          "max": 1,
          "conditions": "VDS=150V, VGS=0V, Tj=25°C",
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        {
          "name": "Gate-source leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
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          "typ": null,
          "max": 100,
          "conditions": "VGS=±20V, VDS=0V",
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        {
          "name": "Drain-source on-state resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
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          "typ": 6.2,
          "max": 7.3,
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        {
          "name": "Transconductance",
          "symbol": "gfs",
          "kind": "electrical",
          "unit": "S",
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          "typ": 59,
          "max": null,
          "conditions": "VDS=5V, ID=60A",
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        },
        {
          "name": "Body diode forward voltage",
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          "kind": "electrical",
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          "max": 1.4,
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        },
        {
          "name": "Body diode reverse recovery time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 122,
          "max": null,
          "conditions": "ISD=60A, VGS=0V, dIF/dt=100A/us",
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        {
          "name": "Body diode reverse recovery charge",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "nC",
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          "typ": 706,
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          "conditions": "ISD=60A, VGS=0V, dIF/dt=100A/us",
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        {
          "name": "Input capacitance",
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          "typ": 5416,
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          "conditions": "VGS=0V, VDS=75V, f=1MHz",
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          "name": "Output capacitance",
          "symbol": "Coss",
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          "typ": 572,
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        {
          "name": "Gate total charge",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 79,
          "max": null,
          "conditions": "VGS=10V, VDS=75V, ID=60A, f=1MHz",
          "source_page": 2,
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          "name": "Gate resistance",
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          "conditions": "VGS=0V, VDS=0V, f=1MHz",
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        {
          "name": "Thermal resistance, junction to case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.55,
          "conditions": "",
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        {
          "name": "Thermal resistance, junction to ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "min. footprint",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
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  "description": "CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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}