component
CRST073N15N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Publish 0.1.0
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CRST073N15N
CRMICRO · MOSFETs · TO-220
CRST073N15N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V, with a typical gate threshold of VDS=VGS at ID=250uA (min 2 V). |
| 2 | D | passive | Drain, also connected to the metal tab; drain-source voltage is rated 150 V and continuous drain current 135 A (silicon limit) at TC=25°C. |
| 3 | S | passive | Source; connects to the body diode anode and the return for drain current of up to 135 A (silicon limit) at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 150 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (silicon limit) | ID | 135 | A | TC = 25°C | 1 | ||
| Continuous drain current (package limit) | ID | 160 | A | TC = 25°C | 1 | ||
| Continuous drain current (silicon limit) | ID | 85 | A | TC = 100°C | 1 | ||
| Pulsed drain current | ID pulse | 540 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Power dissipation | Ptot | 227 | W | TC = 25°C | 1 | ||
| Avalanche energy, single pulse | EAS | 380 | mJ | L=0.5mH, Rg=25Ω (Note 1) | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Drain-source breakdown voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250uA | 2 |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS=150V, VGS=0V, Tj=25°C | 2 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=±20V, VDS=0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 6.2 | 7.3 | mΩ | VGS=10V, ID=60A | 2 | |
| Transconductance | gfs | 31 | 59 | S | VDS=5V, ID=60A | 2 | |
| Body diode forward voltage | VSD | 0.9 | 1.4 | V | VGS=0V, ISD=60A | 3 | |
| Body diode reverse recovery time | trr | 122 | ns | ISD=60A, VGS=0V, dIF/dt=100A/us | 3 | ||
| Body diode reverse recovery charge | Qrr | 706 | nC | ISD=60A, VGS=0V, dIF/dt=100A/us | 3 | ||
| Input capacitance | Ciss | 5416 | pF | VGS=0V, VDS=75V, f=1MHz | 2 | ||
| Output capacitance | Coss | 572 | pF | VGS=0V, VDS=75V, f=1MHz | 2 | ||
| Gate total charge | QG | 79 | nC | VGS=10V, VDS=75V, ID=60A, f=1MHz | 2 | ||
| Gate resistance | RG | 4 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Thermal resistance, junction to case | RthJC | 0.55 | °C/W | 2 | |||
| Thermal resistance, junction to ambient | RthJA | 60 | °C/W | min. footprint | 2 |
CAD (KiCad official)
- Symbol:
CRST073N15N - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
crst073n15n-etched.step/crst073n15n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crst073n15n.step/crst073n15n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (10 pp, sha256
4461650d4bbec8d6, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CRST073N15N
**CRMICRO** · MOSFETs · TO-220
CRST073N15N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V, with a typical gate threshold of VDS=VGS at ID=250uA (min 2 V). |
| 2 | D | passive | Drain, also connected to the metal tab; drain-source voltage is rated 150 V and continuous drain current 135 A (silicon limit) at TC=25°C. |
| 3 | S | passive | Source; connects to the body diode anode and the return for drain current of up to 135 A (silicon limit) at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | | | 150 | V | | 1 |
| Gate-source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current (silicon limit) | ID | | | 135 | A | TC = 25°C | 1 |
| Continuous drain current (package limit) | ID | | | 160 | A | TC = 25°C | 1 |
| Continuous drain current (silicon limit) | ID | | | 85 | A | TC = 100°C | 1 |
| Pulsed drain current | ID pulse | | | 540 | A | TC = 25°C, tp limited by Tjmax | 1 |
| Power dissipation | Ptot | | | 227 | W | TC = 25°C | 1 |
| Avalanche energy, single pulse | EAS | | | 380 | mJ | L=0.5mH, Rg=25Ω (Note 1) | 1 |
| Operating junction and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Drain-source breakdown voltage | BVDSS | 150 | | | V | VGS=0V, ID=250uA | 2 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250uA | 2 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VDS=150V, VGS=0V, Tj=25°C | 2 |
| Gate-source leakage current | IGSS | | | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Drain-source on-state resistance | RDS(on) | | 6.2 | 7.3 | mΩ | VGS=10V, ID=60A | 2 |
| Transconductance | gfs | 31 | 59 | | S | VDS=5V, ID=60A | 2 |
| Body diode forward voltage | VSD | | 0.9 | 1.4 | V | VGS=0V, ISD=60A | 3 |
| Body diode reverse recovery time | trr | | 122 | | ns | ISD=60A, VGS=0V, dIF/dt=100A/us | 3 |
| Body diode reverse recovery charge | Qrr | | 706 | | nC | ISD=60A, VGS=0V, dIF/dt=100A/us | 3 |
| Input capacitance | Ciss | | 5416 | | pF | VGS=0V, VDS=75V, f=1MHz | 2 |
| Output capacitance | Coss | | 572 | | pF | VGS=0V, VDS=75V, f=1MHz | 2 |
| Gate total charge | QG | | 79 | | nC | VGS=10V, VDS=75V, ID=60A, f=1MHz | 2 |
| Gate resistance | RG | | 4 | | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Thermal resistance, junction to case | RthJC | | | 0.55 | °C/W | | 2 |
| Thermal resistance, junction to ambient | RthJA | | | 60 | °C/W | min. footprint | 2 |
## CAD (KiCad official)
- Symbol: `CRST073N15N`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `crst073n15n-etched.step` / `crst073n15n-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `crst073n15n.step` / `crst073n15n.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CRMICRO datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589838268264321024) (10 pp, sha256 `4461650d4bbec8d6`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/crst073n15n-datasheet.pdf)