component
CRST049N08N
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 8d ago |
| viewers | 8d ago |
| crst049n08n-etched.glb | 8d ago |
| crst049n08n-etched.step | 8d ago |
| crst049n08n-hero.glb | 8d ago |
| crst049n08n-hero.overlay.json | 8d ago |
| crst049n08n.glb | 8d ago |
| crst049n08n.kicad_mod | 8d ago |
| crst049n08n.kicad_sym | 8d ago |
| crst049n08n.lbr | 8d ago |
| crst049n08n.step | 8d ago |
| package.json | 8d ago |
| page.json | 8d ago |
| README.md | 8d ago |
CRST049N08N
CRMICRO · MOSFETs · TO-220
CRST049N08N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±20 V maximum, with a typical gate threshold of 3 V (2 to 4 V) at ID=250 µA. |
| 2 | D | passive | Drain, also connected to the tab; drain-source voltage is rated at 85 V maximum and continuous current at 120 A (package limit) at TC=25°C. |
| 3 | S | passive | Source; connects to the body diode anode, and the diode forward voltage is 1.4 V maximum at ISD=50A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 85 | V | VGS=0V, ID=250uA | 2 | ||
| Zero gate voltage drain current (Tj=25°C) | IDSS | 0.05 | 1 | µA | VDS=80V, VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current (Tj=125°C) | IDSS | 5 | µA | VDS=80V, VGS=0V, Tj=125°C | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250uA | 2 |
| Drain-source on-state resistance (TO-220) | RDS(on) | 4.1 | 4.9 | mΩ | VGS=10V, ID=50A | 2 | |
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Body diode forward voltage | VSD | 0.9 | 1.4 | V | VGS=0V, ISD=50A | 3 | |
| Drain-source voltage | VDS | 85 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (silicon limit) | ID | 150 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (package limit) | ID | 120 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (silicon limit) | ID | 95 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 480 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Power dissipation | Ptot | 189 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Avalanche energy, single pulse | EAS | 784 | mJ | EAS(max) under IAS(max)=56A and above conditions (Note 1: L=0.5mH, Rg=25Ω) | 1 | ||
| Thermal resistance, junction to case | RthJC | 0.66 | °C/W | 2 | |||
| Thermal resistance, junction to ambient | RthJA | 58 | °C/W | Min. footprint | 2 |
CAD (KiCad official)
- Symbol:
CRST049N08N - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
crst049n08n-etched.step/crst049n08n-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);crst049n08n.step/crst049n08n.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (10 pp, sha256
ee9ee4315d5c988b, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).