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CRST041N08N

Public Made by Adom

by adom

CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CRST041N08N

CRMICRO · MOSFETs · TO-220

CRST041N08N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold VGS(th) tested at VDS=VGS, ID=250 µA.
2 D passive Drain, also connected to the metal tab; drain-source voltage 85 V max, continuous current 120 A (package limit) at TC=25°C.
3 S passive Source; body diode runs from source to drain, with pulsed drain current up to 480 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-220
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 85 V 1
Gate-Source voltage VGS -20 20 V 1
Continuous drain current (Silicon limit) ID 172 A TC = 25°C (Silicon limit) 1
Continuous drain current (Package limit) ID 120 A TC = 25°C (Package limit) 1
Continuous drain current (Silicon limit) ID 109 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 480 A TC = 25°C, tp limited by Tjmax 1
Avalanche energy, single pulse EAS 272 mJ L=0.5mH, Rg=25Ω 1
Power dissipation Ptot 208 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction-case RthJC 0.6 °C/W 2
Thermal resistance, junction-ambient RthJA 53 °C/W min. footprint 2
Drain-source breakdown voltage BVDSS 85 V VGS=0V, ID=250uA 2
Zero gate voltage drain current IDSS 0.05 1 µA VDS=80V,VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 5 µA VDS=80V,VGS=0V, Tj=125°C 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=250uA 2
Gate-source leakage current IGSS 10 100 nA VGS=±20V,VDS=0V 2
Gate-source leakage current IGSS 5 µA Tj=125°C 2
Drain-source on-state resistance RDS(on) 3.4 4.1 mΩ VGS=10V, ID=50A, TO-220 2
Transconductance gfs 113 S VDS=5V,ID=40A 2
Gate resistance RG 3.3 Ω f=1MHz 2
Input capacitance Ciss 6050 pF VGS=0V, VDS=42.5V, f=1MHz 2
Output capacitance Coss 1480 pF VGS=0V, VDS=42.5V, f=1MHz 2
Reverse transfer capacitance Crss 23 pF VGS=0V, VDS=42.5V, f=1MHz 2
Gate total charge QG 74 nC VGS=10V, VDS=42.5V, ID=50A, f=1MHz 2
Body diode forward voltage VSD 0.9 1.4 V VGS=0V,ISD=50A 3
Body diode reverse recovery time trr 76 ns IS=30A, VGS=0V, dIF/dt=100A/us 3
Body diode reverse recovery charge Qrr 97 nC IS=30A, VGS=0V, dIF/dt=100A/us 3

CAD (KiCad official)

  • Symbol: CRST041N08N
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: crst041n08n-etched.step / crst041n08n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crst041n08n.step / crst041n08n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 6c6cebedda4c557f, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF