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CRST040N10N

Public Made by Adom

by adom

CRMICRO MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CRST040N10N

CRMICRO · MOSFETs · TO-220

CRST040N10N from CRMICRO, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel with VGS rated at ±20 V maximum and threshold VGS(th) of 2 to 4 V at ID=250 µA.
2 D passive Drain, also connected to the metal mounting tab; drain-source voltage is rated at 100 V and continuous current is 120 A (package limit) at TC=25°C.
3 S passive Source; carries the full drain current (120 A package limit at TC=25°C) and the body diode returns to this pin.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 183 A TC = 25°C (Silicon limit) 1
Continuous drain current ID 120 A TC = 25°C (Package limit) 1
Continuous drain current ID 116 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 480 A TC = 25°C, tp limited by Tjmax 1
Avalanche energy, single pulse EAS 300 mJ L=0.5mH, Rg=25Ω 1
Power dissipation Ptot 227 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction-case RthJC 0.55 °C/W 2
Thermal resistance, junction-ambient RthJA 62 °C/W min. footprint 2
Drain-source breakdown voltage BVDSS 100 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS, ID=250uA 2
Zero gate voltage drain current (Tj=25°C) IDSS 0.05 1 µA VDS=100V, VGS=0V, Tj=25°C 2
Zero gate voltage drain current (Tj=125°C) IDSS 5 µA VDS=100V, VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS 10 100 nA VGS=±20V, VDS=0V 2
Drain-source on-state resistance (TO-220) RDS(on) 3.3 4 mΩ VGS=10V, ID=50A 2
Transconductance gfs 108 S VDS=5V, ID=50A 2
Input capacitance Ciss 6920 pF VGS=0V, VDS=50V, f=1MHz 2
Output capacitance Coss 1026 pF VGS=0V, VDS=50V, f=1MHz 2
Reverse transfer capacitance Crss 33.4 pF VGS=0V, VDS=50V, f=1MHz 2
Gate total charge QG 117 nC VGS=10V, VDS=50V, ID=50A 2
Gate-drain charge Qgd 37 nC VGS=10V, VDS=50V, ID=50A 2
Gate resistance RG 2.6 Ω VGS=0V, VDS=0V, f=1MHz 2
Body diode forward voltage VSD 0.85 1.3 V VGS=0V, ISD=50A 3
Body diode reverse recovery time trr 60 ns IF=20A, dI/dt=500A/µs 3
Body diode reverse recovery charge Qrr 560 nC IF=20A, dI/dt=500A/µs 3

CAD (KiCad official)

  • Symbol: CRST040N10N
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: crst040n10n-etched.step / crst040n10n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crst040n10n.step / crst040n10n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (10 pp, sha256 033a2a736b1d5a96, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF