CRSS063N08N

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  "slug": "crss063n08n",
  "title": "CRSS063N08N",
  "brief": "CRMICRO MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "CRSS063N08N",
    "manufacturer": "CRMICRO",
    "package": "TO-263",
    "pin_count": 3,
    "category": "Transistors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/6f39badece4c5e805721090364e62db4.pdf",
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    "distributor_links": {
      "lcsc": "C467177"
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "no match"
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      "mouser": {
        "pn": null,
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; gate-source voltage limited to ±20 V, with a typical gate threshold of 2 to 4 V at VDS=VGS, ID=250 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain, also connected to the exposed tab; drain-source voltage rated 85 V, continuous drain current 80 A (package limit) at TC=25°C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source; body diode runs from source to drain, with a forward voltage of 0.9 V typical and 1.4 V max at ISD=50A."
      }
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        "total": 3,
        "described": 3,
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
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  "metadata": {
    "specs": {
      "Manufacturer": "CRMICRO",
      "Package": "TO-263",
      "Category": "Transistors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
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      "datasheet_sha256": "cb5c1b0dcb880b3b8bdbba88c41c909b3fa188529415fe0ea0c17bc72f424251",
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          "name": "Drain-source voltage",
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          "unit": "V",
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          "typ": null,
          "max": 85,
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        {
          "name": "Gate-Source voltage",
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          "typ": null,
          "max": 20,
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        },
        {
          "name": "Continuous drain current (silicon limit)",
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          "max": 121,
          "conditions": "TC = 25°C (Silicon limit)",
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        {
          "name": "Continuous drain current (package limit)",
          "symbol": "ID",
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          "min": null,
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          "max": 80,
          "conditions": "TC = 25°C (Package limit)",
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        {
          "name": "Continuous drain current (silicon limit)",
          "symbol": "ID",
          "kind": "absolute_maximum",
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          "min": null,
          "typ": null,
          "max": 77,
          "conditions": "TC = 100°C (Silicon limit)",
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        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
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          "conditions": "TC = 25°C, tp limited by Tjmax",
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        },
        {
          "name": "Power dissipation",
          "symbol": "Ptot",
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          "unit": "W",
          "min": null,
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          "conditions": "TC = 25°C",
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        {
          "name": "Operating junction and storage temperature",
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        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
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          "conditions": "L=0.5mH, Rg=25Ω; IAS(max)=42A",
          "source_page": 1,
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        },
        {
          "name": "Thermal resistance, junction-case",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 0.76,
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        },
        {
          "name": "Thermal resistance, junction-ambient (min. footprint)",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
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        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 85,
          "typ": 97,
          "max": null,
          "conditions": "VGS=0V, ID=250uA",
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        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 2,
          "typ": 3,
          "max": 4,
          "conditions": "VDS=VGS, ID=250uA",
          "source_page": 2,
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        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": 0.05,
          "max": 1,
          "conditions": "VDS=80V, VGS=0V, Tj=25°C",
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        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "VDS=80V, VGS=0V, Tj=125°C",
          "source_page": 2,
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        {
          "name": "Gate-source leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": 10,
          "max": 100,
          "conditions": "VGS=±20V, VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance (TO-263)",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 5.4,
          "max": 6.3,
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          "name": "Transconductance",
          "symbol": "gfs",
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          "unit": "S",
          "min": null,
          "typ": 70,
          "max": null,
          "conditions": "VDS=5V, ID=40A",
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          "name": "Gate resistance",
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          "typ": 3.3,
          "max": null,
          "conditions": "f=1MHz",
          "source_page": 2,
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        },
        {
          "name": "Input capacitance",
          "symbol": "Ciss",
          "kind": "electrical",
          "unit": "pF",
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          "typ": 2860,
          "max": null,
          "conditions": "VGS=0V, VDS=42.5V, f=1MHz",
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          "name": "Output capacitance",
          "symbol": "Coss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 790,
          "max": null,
          "conditions": "VGS=0V, VDS=42.5V, f=1MHz",
          "source_page": 2,
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        {
          "name": "Reverse transfer capacitance",
          "symbol": "Crss",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 19,
          "max": null,
          "conditions": "VGS=0V, VDS=42.5V, f=1MHz",
          "source_page": 2,
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        {
          "name": "Gate total charge",
          "symbol": "QG",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 47,
          "max": null,
          "conditions": "VGS=10V, VDS=40V, ID=50A",
          "source_page": 2,
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        },
        {
          "name": "Body diode forward voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.9,
          "max": 1.4,
          "conditions": "VGS=0V, ISD=50A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Body diode reverse recovery time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
          "min": null,
          "typ": 56,
          "max": null,
          "conditions": "IS=30A, VGS=0V, dIF/dt=100A/us",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Body diode reverse recovery charge",
          "symbol": "Qrr",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 54,
          "max": null,
          "conditions": "IS=30A, VGS=0V, dIF/dt=100A/us",
          "source_page": 3,
          "source": "datasheet"
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      ]
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