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Contents

README

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CRG40T65AN5H

CRMICRO · IGBT Transistors / Modules · TO-3PN

CRG40T65AN5H from CRMICRO, in a TO-3PN. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-emitter voltage is rated at ±20V DC and ±30V transient (tp≤10μs, D<0.01), with VGE(th) 3.5V min to 6.5V max at IC=250μA.
2 C passive Collector (also connected to the mounting tab per the package drawing); VCES is 650V with 40A DC collector current at TC=100℃.
3 E passive Emitter, which is also the anti-parallel diode anode; diode DC forward current is 40A at TC=25℃.

Key specifications

Parameter Value
Manufacturer CRMICRO
Package TO-3PN
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage (DC) VCES 650 V 2
Gate-emitter voltage (DC) VGES -20 20 V 2
Gate-emitter voltage (transient) VGES -30 30 V tp≤10μs, D<0.01 2
Collector DC current IC 80 A TC=25℃ 2
Collector DC current IC 40 A TC=100℃ 2
Pulsed collector current ICM 160 A TC=25℃ 2
Diode DC forward current IF 40 A TC=25℃ 2
Diode DC forward current IF 20 A TC=100℃ 2
Diode pulsed forward current IFM 60 A 2
Power dissipation PD 250 W TC=25℃ 2
Power dissipation PD 125 W TC=100℃ 2
Operating junction temperature range Tj -40 175 ℃ 2
Storage temperature range Tstg -55 150 ℃ 2
Maximum lead soldering temperature TL 270 ℃ 2
Thermal resistance junction-to-case (IGBT) RθJC 0.6 ℃/W 2
Thermal resistance junction-to-case (diode) RθJC 1.25 ℃/W 2
Thermal resistance junction-to-ambient RθJA 40 ℃/W 2
Collector-emitter breakdown voltage V(BR)CES 650 V VGE=0V, ICE=250uA 2
Zero gate voltage collector current ICES 1 mA VGE=0V, VCE=650V 2
Forward gate-body leakage current IGES(F) 250 nA VGE=+20V 2
Reverse gate-body leakage current IGES(R) -250 nA VGE=-20V 2
Collector-emitter saturation voltage VCE(sat) 1.65 2.2 V IC=40A, VGE=15V, TC=25℃ 2
Gate threshold voltage VGE(th) 3.5 6.5 V IC=250uA, VCE=VGE 2
Diode forward voltage VF 1.33 2.3 V IF=20A, TC=25℃ 3

CAD (KiCad official)

  • Symbol: CRG40T65AN5H
  • Footprint: Package_TO_SOT_THT:TO-3P-3_Vertical
  • 3D model: TO-3PN (KiCad packages3D, STEP)
  • 3D model files: crg40t65an5h-etched.step / crg40t65an5h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); crg40t65an5h.step / crg40t65an5h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: CRMICRO datasheet (11 pp, sha256 cdee34f6268f80d1, retrieved 2026-11-06, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF