component
CR4N60A4K
Public Made by Adomby adom
CRMICRO MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownCR4N60A4K
CRMICRO · MOSFETs · TO-252
CR4N60A4K from CRMICRO, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control input; gate-to-source voltage is rated at ±30 V maximum, with a threshold of 2.0 to 4.0 V at ID = 250 µA. |
| 2 | Drain | passive | Drain terminal, rated for 600 V drain-to-source and 4 A continuous drain current (16 A pulsed). |
| 3 | Source | passive | Source terminal, which is also the body-diode anode, rated for 4 A continuous source current (16 A pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 600 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 4 | A | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 2.5 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 16 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 250 | mJ | L=10mH, ID=7A, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD=4A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 75 | W | Tc=25℃ | 1 | ||
| Derating Factor above 25°C | 0.6 | W/℃ | 1 | ||||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain to Source Breakdown Voltage | VDSS | 600 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS=600V, VGS=0V, TJ=25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS=480V, VGS=0V, TJ=125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 2.1 | 2.5 | Ω | VGS=10V, ID=2A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Diode Forward Voltage | VSD | 1.5 | V | IS=4.0A, VGS=0V | 3 | ||
| Continuous Source Current (Body Diode) | IS | 4 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 16 | A | 3 | |||
| Junction-to-Case Thermal Resistance | RθJC | 1.67 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 100 | ℃/W | 3 | |||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.67 | V/℃ | ID=250uA, Reference 25℃ | 2 | ||
| Forward Transconductance | gfs | 3.5 | S | VDS=15V, ID=2A | 2 | ||
| Input Capacitance | Ciss | 583 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 44 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 2.7 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 13 | ns | ID=4A, VDD=300V, RG=10Ω | 2 | ||
| Rise Time | tr | 8.8 | ns | ID=4A, VDD=300V, RG=10Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 25 | ns | ID=4A, VDD=300V, RG=10Ω | 2 | ||
| Fall Time | tf | 9.5 | ns | ID=4A, VDD=300V, RG=10Ω | 2 | ||
| Total Gate Charge | Qg | 15.4 | nC | ID=4A, VDD=480V, VGS=10V | 2 | ||
| Gate to Source Charge | Qgs | 2.7 | nC | ID=4A, VDD=480V, VGS=10V | 2 | ||
| Gate to Drain (Miller) Charge | Qgd | 8.2 | nC | ID=4A, VDD=480V, VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 560 | ns | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 2500 | nC | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Current | IRRM | 9 | A | IS=4.0A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
CR4N60A4K - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
cr4n60a4k-etched.step/cr4n60a4k-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);cr4n60a4k.step/cr4n60a4k.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (10 pp, sha256
7d2c538a3c7983db, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).