component
CR10N65FA9K
Public Made by Adomby adom
CRMICRO MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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CR10N65FA9K
CRMICRO · MOSFETs · TO-220F-3
CR10N65FA9K from CRMICRO, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±30 V maximum, threshold VGS(TH) 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain; rated VDSS 600 V and continuous drain current 10 A at TC = 25 °C. |
| 3 | S | passive | Source; the body diode continuous source current is 10 A maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220F-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 600 | V | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 10 | A | Tc=25℃ | 1 | ||
| Continuous Drain Current | ID | 6.3 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 40 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 580 | mJ | L=10mH, ID=10A, Start TJ=25℃ | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD=10A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 40 | W | Tc=25℃ | 1 | ||
| Derating Factor above 25°C | 0.32 | W/℃ | 1 | ||||
| Operating Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Drain to Source Breakdown Voltage | VDSS | 600 | V | VGS=0V, ID=250µA | 2 | ||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.67 | V/℃ | ID=250uA, Reference 25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS=600V, VGS=0V, TJ=25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS=480V, VGS=0V, TJ=125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 0.68 | 0.9 | Ω | VGS=10V, ID=5A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS = VGS, ID = 250µA | 2 | |
| Forward Transconductance | gfs | 9.5 | S | VDS=15V, ID=5A | 2 | ||
| Input Capacitance | Ciss | 1530 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 116 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 4.9 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 26 | ns | ID=10A, VDD=300V, RG=10Ω | 2 | ||
| Rise Time | tr | 23 | ns | ID=10A, VDD=300V, RG=10Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 49 | ns | ID=10A, VDD=300V, RG=10Ω | 2 | ||
| Fall Time | tf | 27 | ns | ID=10A, VDD=300V, RG=10Ω | 2 | ||
| Total Gate Charge | Qg | 31 | nC | ID=10A, VDD=480V, VGS=10V | 2 | ||
| Gate to Source Charge | Qgs | 7 | nC | ID=10A, VDD=480V, VGS=10V | 2 | ||
| Gate to Drain (Miller) Charge | Qgd | 12 | nC | ID=10A, VDD=480V, VGS=10V | 2 | ||
| Continuous Source Current (Body Diode) | IS | 10 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 40 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=10A, VGS=0V | 3 | ||
| Reverse Recovery Time | trr | 1010 | ns | IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 5150 | nC | IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Current | IRRM | 13.5 | A | IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 | ||
| Junction-to-Case Thermal Resistance | RθJC | 3.13 | ℃/W | 3 | |||
| Junction-to-Ambient Thermal Resistance | RθJA | 62.5 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
CR10N65FA9K - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CRMICRO datasheet (6 pp, sha256
c97e930a6fd71679, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# CR10N65FA9K
**CRMICRO** · MOSFETs · TO-220F-3
CR10N65FA9K from CRMICRO, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±30 V maximum, threshold VGS(TH) 2.0 to 4.0 V at ID = 250 µA. |
| 2 | D | passive | Drain; rated VDSS 600 V and continuous drain current 10 A at TC = 25 °C. |
| 3 | S | passive | Source; the body diode continuous source current is 10 A maximum. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CRMICRO |
| Package | TO-220F-3 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | | | 600 | V | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 10 | A | Tc=25℃ | 1 |
| Continuous Drain Current | ID | | | 6.3 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 40 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Gate-to-Source Voltage | VGS | -30 | | 30 | V | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 580 | mJ | L=10mH, ID=10A, Start TJ=25℃ | 1 |
| Peak Diode Recovery dv/dt | dv/dt | | | 5 | V/ns | ISD=10A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 |
| Power Dissipation | PD | | | 40 | W | Tc=25℃ | 1 |
| Derating Factor above 25°C | | | | 0.32 | W/℃ | | 1 |
| Operating Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature Range | Tstg | -55 | | 150 | ℃ | | 1 |
| Maximum Temperature for Soldering | TL | | | 300 | ℃ | | 1 |
| Drain to Source Breakdown Voltage | VDSS | 600 | | | V | VGS=0V, ID=250µA | 2 |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | | 0.67 | | V/℃ | ID=250uA, Reference 25℃ | 2 |
| Drain to Source Leakage Current | IDSS | | | 1 | µA | VDS=600V, VGS=0V, TJ=25℃ | 2 |
| Drain to Source Leakage Current | IDSS | | | 100 | µA | VDS=480V, VGS=0V, TJ=125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) | | | 100 | nA | VGS=+30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) | -100 | | | nA | VGS=-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) | | 0.68 | 0.9 | Ω | VGS=10V, ID=5A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 | | 4 | V | VDS = VGS, ID = 250µA | 2 |
| Forward Transconductance | gfs | | 9.5 | | S | VDS=15V, ID=5A | 2 |
| Input Capacitance | Ciss | | 1530 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Output Capacitance | Coss | | 116 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 4.9 | | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Turn-on Delay Time | td(ON) | | 26 | | ns | ID=10A, VDD=300V, RG=10Ω | 2 |
| Rise Time | tr | | 23 | | ns | ID=10A, VDD=300V, RG=10Ω | 2 |
| Turn-Off Delay Time | td(OFF) | | 49 | | ns | ID=10A, VDD=300V, RG=10Ω | 2 |
| Fall Time | tf | | 27 | | ns | ID=10A, VDD=300V, RG=10Ω | 2 |
| Total Gate Charge | Qg | | 31 | | nC | ID=10A, VDD=480V, VGS=10V | 2 |
| Gate to Source Charge | Qgs | | 7 | | nC | ID=10A, VDD=480V, VGS=10V | 2 |
| Gate to Drain (Miller) Charge | Qgd | | 12 | | nC | ID=10A, VDD=480V, VGS=10V | 2 |
| Continuous Source Current (Body Diode) | IS | | | 10 | A | | 3 |
| Maximum Pulsed Current (Body Diode) | ISM | | | 40 | A | | 3 |
| Diode Forward Voltage | VSD | | | 1.5 | V | IS=10A, VGS=0V | 3 |
| Reverse Recovery Time | trr | | 1010 | | ns | IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Charge | Qrr | | 5150 | | nC | IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Current | IRRM | | 13.5 | | A | IS=10A, Tj=25℃, dIF/dt=100A/us, VGS=0V | 3 |
| Junction-to-Case Thermal Resistance | RθJC | | | 3.13 | ℃/W | | 3 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 62.5 | ℃/W | | 3 |
## CAD (KiCad official)
- Symbol: `CR10N65FA9K`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [CRMICRO datasheet](docs/cr10n65fa9k-datasheet.pdf) (6 pp, sha256 `c97e930a6fd71679`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/cr10n65fa9k-datasheet.pdf)