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CQY80N

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Vishay Intertech Transistor, Photovoltaic Output Optoisolators, DIP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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CQY80N

Vishay Intertech · Transistor, Photovoltaic Output Optoisolators · DIP-6

CQY80N from Vishay Intertech, in a DIP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A (+) passive Anode (+) of the gallium arsenide infrared-emitting diode, with absolute maximum forward current IF of 60 mA and reverse voltage VR of 5 V.
2 C (-) passive Cathode (-) of the infrared-emitting diode, with absolute maximum forward current IF of 60 mA and forward surge current IFSM of 1.5 A (tp ≤ 10 µs).
3 NC unconnected Not connected; the datasheet pin diagram labels this pin NC and gives no electrical function.
4 E passive Emitter of the phototransistor output, with absolute maximum collector-emitter voltage VCEO of 32 V and emitter-collector voltage VECO of 7 V.
5 C passive Collector of the phototransistor output, with absolute maximum collector current IC of 50 mA and collector peak current ICM of 100 mA (tp/T = 0.5, tp ≤ 10 ms).
6 B passive Base connection of the phototransistor output, brought out as a separate pin per the datasheet title 'with Base Connection'; no base limit is stated.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package DIP-6
Category Optoisolators
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Ambient temperature range Tamb -55 100 °C 2
Storage temperature range Tstg -55 125 °C 2
Reverse voltage VR 5 V 2
Forward current IF 60 mA 2
Power dissipation (input) Pdiss 70 mW 2
Junction temperature (input) Tj 125 °C 2
Forward surge current IFSM 1.5 A tp ≤ 10 µs 2
Collector emitter voltage VCEO 32 V 2
Emitter collector voltage VECO 7 V 2
Collector current IC 50 mA 2
Collector peak current ICM 100 mA tp/T = 0.5, tp ≤ 10 ms 2
Power dissipation (output) Pdiss 70 mW 2
Junction temperature (output) Tj 125 °C 2
Isolation test voltage (RMS) VISO 5000 VRMS t = 1 min 2
Total power dissipation Ptot 250 mW 2
Soldering temperature Tsld 260 °C 2 mm from case, t ≤ 10 s 2
Forward voltage VF 1.25 1.6 V IF = 50 mA 2
Junction capacitance Cj 50 pF VR = 0 V, f = 1 MHz 2
Collector emitter voltage (breakdown) VCEO 32 V IC = 1 mA 2
Emitter collector voltage (breakdown) VECO 7 V IE = 100 µA 2
Collector emitter leakage current ICEO 10 200 nA VCE = 20 V, IF = 0 A, E = 0 2
Collector emitter saturation voltage VCEsat 0.3 V IF = 10 mA, IC = 1 mA 2
Cut-off frequency fc 110 kHz VCE = 5 V, IF = 10 mA, RL = 100 Ω 2
Coupling capacitance Ck 0.3 pF f = 1 MHz 2
Current transfer ratio CTR 50 90 % VCE = 5 V, IF = 10 mA 2
Forward current (safety rating) IF 130 mA maximum safety ratings 3
Power dissipation (safety rating) Pdiss 265 mW maximum safety ratings 3
Rated impulse voltage VIOTM 6 kV 3
Safety temperature Tsi 150 °C 3
Partial discharge test voltage (routine test) Vpd 1.6 kV routine test 100 %, ttest = 1 s 3
Partial discharge test voltage (lot test) Vpd 1.3 kV lot test (sample test), tTr = 60 s, ttest = 10 s 3
Delay time td 4 µs VS = 5 V, IC = 5 mA, RL = 100 Ω 4
Rise time tr 7 µs VS = 5 V, IC = 5 mA, RL = 100 Ω 4
Fall time tf 6.7 µs VS = 5 V, IC = 5 mA, RL = 100 Ω 4
Storage time ts 0.3 µs VS = 5 V, IC = 5 mA, RL = 100 Ω 4
Turn-on time (non-saturated) ton 11 µs VS = 5 V, IC = 5 mA, RL = 100 Ω 4
Turn-off time (non-saturated) toff 7 µs VS = 5 V, IC = 5 mA, RL = 100 Ω 4
Turn-on time (saturated) ton 25 µs VS = 5 V, IF = 10 mA, RL = 1 kΩ 4
Turn-off time (saturated) toff 42.5 µs VS = 5 V, IF = 10 mA, RL = 1 kΩ 4

CAD (KiCad official)

  • Symbol: CQY80N
  • Footprint: Package_DIP:DIP-6_W7.62mm
  • 3D model: DIP-6 (KiCad packages3D, STEP)
  • 3D model files: cqy80n-etched.step / cqy80n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); cqy80n.step / cqy80n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (8 pp, sha256 6344ffe64f53ca81, retrieved 2026-10-28, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF